Comment on "engineered Schottky barrier diodes for the modification and control of Schottky barrier heights" [J. Appl. Phys. 61, 5159 (1987)]

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Abstract

Eglash and co-workers [J. Appl. Phys. 61, 5159 (1987)] studying the dependence of the voltage intercept of the C-2-V plots for the engineered Schottky barrier diodes on the thickness of the p+ region used an analytical expression of the C-V characteristics for the prediction of the voltage intercept. In this communication, a general expression is derived for the C-V characteristics of the Schottky contacts with changing dopant concentration at the M-S interface. It is shown that the expression used by Eglash and co-workers is a special case of this general expression.

Original languageEnglish
Pages (from-to)443-444
Number of pages2
JournalJournal of Applied Physics
Volume64
Issue number1
DOIs
Publication statusPublished - 1988

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Schottky diodes
electric potential
electric contacts
plots
communication
predictions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "Eglash and co-workers [J. Appl. Phys. 61, 5159 (1987)] studying the dependence of the voltage intercept of the C-2-V plots for the engineered Schottky barrier diodes on the thickness of the p+ region used an analytical expression of the C-V characteristics for the prediction of the voltage intercept. In this communication, a general expression is derived for the C-V characteristics of the Schottky contacts with changing dopant concentration at the M-S interface. It is shown that the expression used by Eglash and co-workers is a special case of this general expression.",
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N2 - Eglash and co-workers [J. Appl. Phys. 61, 5159 (1987)] studying the dependence of the voltage intercept of the C-2-V plots for the engineered Schottky barrier diodes on the thickness of the p+ region used an analytical expression of the C-V characteristics for the prediction of the voltage intercept. In this communication, a general expression is derived for the C-V characteristics of the Schottky contacts with changing dopant concentration at the M-S interface. It is shown that the expression used by Eglash and co-workers is a special case of this general expression.

AB - Eglash and co-workers [J. Appl. Phys. 61, 5159 (1987)] studying the dependence of the voltage intercept of the C-2-V plots for the engineered Schottky barrier diodes on the thickness of the p+ region used an analytical expression of the C-V characteristics for the prediction of the voltage intercept. In this communication, a general expression is derived for the C-V characteristics of the Schottky contacts with changing dopant concentration at the M-S interface. It is shown that the expression used by Eglash and co-workers is a special case of this general expression.

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