Comment on "Current-voltage characteristics and interface state density of GaAs Schottky barrier" [Appl. Phys. Lett. 62, 2560 (1993)]

Research output: Contribution to journalComment/debate

2 Citations (Scopus)
Original languageEnglish
Pages (from-to)511-512
Number of pages2
JournalApplied Physics Letters
Volume65
Issue number4
DOIs
Publication statusPublished - Dec 1 1994

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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