Comment on "Breakdown voltage of high-voltage GaAs Schottky diodes"

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)1835-1836
Number of pages2
JournalSolid-State Electronics
Volume38
Issue number10
DOIs
Publication statusPublished - 1995

Fingerprint

Electric breakdown
Diodes
Electric potential
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Comment on "Breakdown voltage of high-voltage GaAs Schottky diodes". / Horváth, Z.

In: Solid-State Electronics, Vol. 38, No. 10, 1995, p. 1835-1836.

Research output: Contribution to journalArticle

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title = "Comment on {"}Breakdown voltage of high-voltage GaAs Schottky diodes{"}",
author = "Z. Horv{\'a}th",
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doi = "10.1016/0038-1101(95)00077-7",
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pages = "1835--1836",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "10",

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VL - 38

SP - 1835

EP - 1836

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 10

ER -