High dose ion implantation was used to form polycrystalline suicide films on porous silicon with different native concentrations of light impurities (C and O). Porous silicon layers several μm thick were implanted with 170 keV Cr+ ions to fluences of 3 × 1017 ions/cm2 both at room temperature and 450°C. Similar samples were implanted with 100 keV Co+ ions to fluences of 2 × 1017 ions/cm2 at room temperature, 350°C, and 450°C. The formed suicide compounds were studied by Rutherford backscattering spectrometry, elastic recoil detection, glancing incidence X-ray diffraction, and four point-probe sheet resistance measurements. Selected Co implanted samples were analysed by cross-section transmission electron microscopy. Results show that the light impurities were partially expelled from the forming suicide layer. Combining cross-section transmission electron microscopy with ion beam methods it was possible to show that, in the implanted region, the porous structure collapses and densifies during implantation, but the underlying porous silicon remains intact. The layer structure, as well as the quality and type of the formed suicide, were found to depend on the original impurity level, implantation temperature, and annealing.
|Number of pages||8|
|Journal||Acta Physica Polonica A|
|Publication status||Published - Jan 1 2001|
|Event||36th Zakopane School of Physics International Symposium on Condensed Matter Studies with Nuclear Methods - Zakopane, Poland|
Duration: May 14 2001 → May 19 2001
ASJC Scopus subject areas
- Physics and Astronomy(all)