Columnar growth structure and evolution of wavy interface morphology in amorphous multilayered thin films

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Abstract

Columnar growth and evolution of wavy interface morphology, formation of nodes and growth morphology on a random surface was investigated by cross-sectional transmission electron microscopy (XTEM) in sputtered amorphous Si/Ge (a-Si/Ge) multilayers. It was demonstrated that shadowing is responsible for the formation of these morphological features and Huygens principle can be applied for their description. For the study of the relation of the columnar growth and wavy interface morphology periodic multilayers were deposited with layer thicknesses up to 50 nm. In a-Si/Ge multilayers the minima of the wavy interface morphology, coincide with the column boundaries. The diameter of columns shows linear dependence on the thickness of the thicker component layer, indicating that the correlated multilayer structure is established by the surface morphology of the thicker component layer.

Original languageEnglish
Pages (from-to)5-8
Number of pages4
JournalThin Solid Films
Volume343-344
Issue number1-2
Publication statusPublished - 1999

Fingerprint

Amorphous films
Multilayers
Thin films
thin films
Huygens principle
Surface morphology
laminates
Transmission electron microscopy
transmission electron microscopy

Keywords

  • Columnar growth structure
  • Multilayered thin films
  • Wavy interface morphology

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

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abstract = "Columnar growth and evolution of wavy interface morphology, formation of nodes and growth morphology on a random surface was investigated by cross-sectional transmission electron microscopy (XTEM) in sputtered amorphous Si/Ge (a-Si/Ge) multilayers. It was demonstrated that shadowing is responsible for the formation of these morphological features and Huygens principle can be applied for their description. For the study of the relation of the columnar growth and wavy interface morphology periodic multilayers were deposited with layer thicknesses up to 50 nm. In a-Si/Ge multilayers the minima of the wavy interface morphology, coincide with the column boundaries. The diameter of columns shows linear dependence on the thickness of the thicker component layer, indicating that the correlated multilayer structure is established by the surface morphology of the thicker component layer.",
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T1 - Columnar growth structure and evolution of wavy interface morphology in amorphous multilayered thin films

AU - Czigány, Z.

AU - Radnóczi, G.

PY - 1999

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AB - Columnar growth and evolution of wavy interface morphology, formation of nodes and growth morphology on a random surface was investigated by cross-sectional transmission electron microscopy (XTEM) in sputtered amorphous Si/Ge (a-Si/Ge) multilayers. It was demonstrated that shadowing is responsible for the formation of these morphological features and Huygens principle can be applied for their description. For the study of the relation of the columnar growth and wavy interface morphology periodic multilayers were deposited with layer thicknesses up to 50 nm. In a-Si/Ge multilayers the minima of the wavy interface morphology, coincide with the column boundaries. The diameter of columns shows linear dependence on the thickness of the thicker component layer, indicating that the correlated multilayer structure is established by the surface morphology of the thicker component layer.

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