Coherent Light Photo-modification, Mass Transport Effect, and Surface Relief Formation in AsxS100-x Nanolayers: Absorption Edge, XPS, and Raman Spectroscopy Combined with Profilometry Study

O. Kondrat, R. Holomb, A. Csík, V. Takáts, M. Veres, V. Mitsa

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

AsxS100-x (x = 40, 45, 50) thin films top surface nanolayers affected by green (532 nm) diode laser illumination have been studied by high-resolution X-ray photoelectron spectroscopy, Raman spectroscopy, optical spectroscopy, and surface profilometry. It is shown that the composition of obtained films depends not only on the composition of the source material but as well on the composition of the vapor during the evaporation process. Near-bandgap laser light decreases both As–As and S–S homopolar bonds in films, obtained from thermal evaporation of the As40S60 and As50S50 glasses. Although As45S55 composition demonstrates increasing of As–As bonds despite to the partial disappearance of S–S bonds, for explanation of this phenomenon Raman investigations has also been performed. It is shown that As4S3 structural units (s.u.) responsible for the observed effect. Laser light induced surface topology of the As45S55 film has been recorded by 2D profilometer.

Original languageEnglish
Article number149
JournalNanoscale Research Letters
Volume12
Issue number1
DOIs
Publication statusPublished - Dec 1 2017

Fingerprint

Profilometry
coherent light
Raman spectroscopy
Mass transfer
X ray photoelectron spectroscopy
Chemical analysis
spectroscopy
evaporation
profilometers
Thermal evaporation
Lasers
lasers
Semiconductor lasers
Evaporation
Energy gap
topology
Lighting
semiconductor lasers
illumination
Vapors

Keywords

  • As-S nanolayers
  • Chalcogenide thin films
  • Core level
  • Mass transport
  • Photoinduced changes
  • Raman spectroscopy
  • Valence band
  • XPS

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

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abstract = "AsxS100-x (x = 40, 45, 50) thin films top surface nanolayers affected by green (532 nm) diode laser illumination have been studied by high-resolution X-ray photoelectron spectroscopy, Raman spectroscopy, optical spectroscopy, and surface profilometry. It is shown that the composition of obtained films depends not only on the composition of the source material but as well on the composition of the vapor during the evaporation process. Near-bandgap laser light decreases both As–As and S–S homopolar bonds in films, obtained from thermal evaporation of the As40S60 and As50S50 glasses. Although As45S55 composition demonstrates increasing of As–As bonds despite to the partial disappearance of S–S bonds, for explanation of this phenomenon Raman investigations has also been performed. It is shown that As4S3 structural units (s.u.) responsible for the observed effect. Laser light induced surface topology of the As45S55 film has been recorded by 2D profilometer.",
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AU - Holomb, R.

AU - Csík, A.

AU - Takáts, V.

AU - Veres, M.

AU - Mitsa, V.

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N2 - AsxS100-x (x = 40, 45, 50) thin films top surface nanolayers affected by green (532 nm) diode laser illumination have been studied by high-resolution X-ray photoelectron spectroscopy, Raman spectroscopy, optical spectroscopy, and surface profilometry. It is shown that the composition of obtained films depends not only on the composition of the source material but as well on the composition of the vapor during the evaporation process. Near-bandgap laser light decreases both As–As and S–S homopolar bonds in films, obtained from thermal evaporation of the As40S60 and As50S50 glasses. Although As45S55 composition demonstrates increasing of As–As bonds despite to the partial disappearance of S–S bonds, for explanation of this phenomenon Raman investigations has also been performed. It is shown that As4S3 structural units (s.u.) responsible for the observed effect. Laser light induced surface topology of the As45S55 film has been recorded by 2D profilometer.

AB - AsxS100-x (x = 40, 45, 50) thin films top surface nanolayers affected by green (532 nm) diode laser illumination have been studied by high-resolution X-ray photoelectron spectroscopy, Raman spectroscopy, optical spectroscopy, and surface profilometry. It is shown that the composition of obtained films depends not only on the composition of the source material but as well on the composition of the vapor during the evaporation process. Near-bandgap laser light decreases both As–As and S–S homopolar bonds in films, obtained from thermal evaporation of the As40S60 and As50S50 glasses. Although As45S55 composition demonstrates increasing of As–As bonds despite to the partial disappearance of S–S bonds, for explanation of this phenomenon Raman investigations has also been performed. It is shown that As4S3 structural units (s.u.) responsible for the observed effect. Laser light induced surface topology of the As45S55 film has been recorded by 2D profilometer.

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