CMOS-compatible synthesis of large-area, high-mobility graphene by chemical vapor deposition of acetylene on cobalt thin films

Michael E. Ramón, Aparna Gupta, Chris Corbet, Domingo A. Ferrer, Hema C P Movva, Gary Carpenter, Luigi Colombo, G. Bourianoff, Mark Doczy, Deji Akinwande, Emanuel Tutuc, Sanjay K. Banerjee

Research output: Contribution to journalArticle

76 Citations (Scopus)

Abstract

We demonstrate the synthesis of large-area graphene on Co, a complementary metal-oxide-semiconductor (CMOS)-compatible metal, using acetylene (C 2H2) as a precursor in a chemical vapor deposition (CVD)-based method. Cobalt films were deposited on SiO2/Si, and the influence of Co film thickness on monolayer graphene growth was studied, based on the solubility of C in Co. The surface area coverage of monolayer graphene was observed to increase with decreasing Co film thickness. A thorough Raman spectroscopic analysis reveals that graphene films, grown on an optimized Co film thickness, are principally composed of monolayer graphene. Transport properties of monolayer graphene films were investigated by fabrication of back-gated graphene field-effect transistors (GFETs), which exhibited high hole and electron mobility of ∼1600 cm2/V s and ∼1000 cm 2/V s, respectively, and a low trap density of ∼1.2 × 1011 cm-2.

Original languageEnglish
Pages (from-to)7198-7204
Number of pages7
JournalACS Nano
Volume5
Issue number9
DOIs
Publication statusPublished - Sep 27 2011

Fingerprint

Acetylene
Graphite
Cobalt
acetylene
Graphene
Chemical vapor deposition
CMOS
graphene
cobalt
Metals
vapor deposition
Thin films
synthesis
thin films
Monolayers
Film thickness
film thickness
Hole mobility
Spectroscopic analysis
Electron mobility

Keywords

  • acetylene
  • cobalt
  • grapheme
  • mobility
  • transistor

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Ramón, M. E., Gupta, A., Corbet, C., Ferrer, D. A., Movva, H. C. P., Carpenter, G., ... Banerjee, S. K. (2011). CMOS-compatible synthesis of large-area, high-mobility graphene by chemical vapor deposition of acetylene on cobalt thin films. ACS Nano, 5(9), 7198-7204. https://doi.org/10.1021/nn202012m

CMOS-compatible synthesis of large-area, high-mobility graphene by chemical vapor deposition of acetylene on cobalt thin films. / Ramón, Michael E.; Gupta, Aparna; Corbet, Chris; Ferrer, Domingo A.; Movva, Hema C P; Carpenter, Gary; Colombo, Luigi; Bourianoff, G.; Doczy, Mark; Akinwande, Deji; Tutuc, Emanuel; Banerjee, Sanjay K.

In: ACS Nano, Vol. 5, No. 9, 27.09.2011, p. 7198-7204.

Research output: Contribution to journalArticle

Ramón, ME, Gupta, A, Corbet, C, Ferrer, DA, Movva, HCP, Carpenter, G, Colombo, L, Bourianoff, G, Doczy, M, Akinwande, D, Tutuc, E & Banerjee, SK 2011, 'CMOS-compatible synthesis of large-area, high-mobility graphene by chemical vapor deposition of acetylene on cobalt thin films', ACS Nano, vol. 5, no. 9, pp. 7198-7204. https://doi.org/10.1021/nn202012m
Ramón, Michael E. ; Gupta, Aparna ; Corbet, Chris ; Ferrer, Domingo A. ; Movva, Hema C P ; Carpenter, Gary ; Colombo, Luigi ; Bourianoff, G. ; Doczy, Mark ; Akinwande, Deji ; Tutuc, Emanuel ; Banerjee, Sanjay K. / CMOS-compatible synthesis of large-area, high-mobility graphene by chemical vapor deposition of acetylene on cobalt thin films. In: ACS Nano. 2011 ; Vol. 5, No. 9. pp. 7198-7204.
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