In the context of the development of silicon photonics, various Ti- and Ni-based alloyed metallizations have been investigated for the purpose of forming low resistivity and Si CMOS-compatible contacts to n-InP. The innovative Ni2P metallization combined with an in situ Ar+ preclean represents the most suitable available solution for the formation of ohmic contacts with a specific contact resistivity as low as 4.3 × 10-6 Ω2 on such a semiconductor. The latter additionally presents the advantage of being stable at least up to 350 °C and could therefore withstand additional integration processes conducted at this temperature.
- III-V laser
- metal/n-InP contacts
- silicon photonics
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering