CMOS-Compatible Contacts to n-InP

Elodie Ghegin, Philippe Rodriguez, Mattia Pasquali, Isabelle Sagnes, János L. Lábár, Vincent Delaye, Tiphaine Card, Jérémy Da Fonseca, Christophe Jany, Fabrice Nemouchi

Research output: Contribution to journalArticle

8 Citations (Scopus)


In the context of the development of silicon photonics, various Ti- and Ni-based alloyed metallizations have been investigated for the purpose of forming low resistivity and Si CMOS-compatible contacts to n-InP. The innovative Ni2P metallization combined with an in situ Ar+ preclean represents the most suitable available solution for the formation of ohmic contacts with a specific contact resistivity as low as 4.3 × 10-6 Ω2 on such a semiconductor. The latter additionally presents the advantage of being stable at least up to 350 °C and could therefore withstand additional integration processes conducted at this temperature.

Original languageEnglish
Article number8048014
Pages (from-to)4408-4414
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number11
Publication statusPublished - Nov 2017


  • III-V laser
  • metal/n-InP contacts
  • silicon photonics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Ghegin, E., Rodriguez, P., Pasquali, M., Sagnes, I., Lábár, J. L., Delaye, V., Card, T., Da Fonseca, J., Jany, C., & Nemouchi, F. (2017). CMOS-Compatible Contacts to n-InP. IEEE Transactions on Electron Devices, 64(11), 4408-4414. [8048014].