Cluster model study of the incorporation process of excess arsenic into interstitial positions of the GaAs lattice

T. Marek, S. Kunsagi-Mate, H. P. Strunk

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

We study an As2 molecule approaching a planar, non-reconstructed, As terminated GaAs(001) surface by using a suitable cluster and quantum mechanical ab-initio calculation methods. During our calculations the As2 molecule is always oriented perpendicularly to the surface and its bonding length may vary. We find a metastable position below the growing surface which facilitates the incorporation of the leading As atom into an interstitial position of the crystal during growth. We give a first model for this incorporation process.

Original languageEnglish
Pages (from-to)233-238
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume584
Publication statusPublished - Jan 1 2000
EventMaterial Issues and Modeling for Device Nanofabrication - Boston, MA, USA
Duration: Nov 29 1999Dec 2 1999

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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