The paper gives an account of the research on physical modeling of various integrated circuit elements by using the TRANZ-TRAN circuit analysis program. The application of the circuit analysis program in this field affords a very efficient method for examining the characteristics of the individual devices with appropriate accuracy. Methods have been developed for: exact investigation of the base region of transistors, examining the current crowding phenomena in bipolar transistors, physical and circuit-oriented modeling of I**2L elements, and simulation of various MOS structures.
|Number of pages||9|
|Journal||Periodica Polytechnica Electrical Engineering|
|Publication status||Published - Jan 1 1980|
ASJC Scopus subject areas
- Electrical and Electronic Engineering