Chemical vapor deposition of boron nitride thin films on SiC

Mikhail Chubarov, Henrik Pedersen, Hans Högberg, Magnus Garbrecht, Zsolt Czigány, Sven G. Andersson, Anne Henry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We give here an overview of our recent work on growth of rhombohedral boron nitride (r-BN) thin films on SiC substrates by chemical vapor deposition (CVD). We demonstrate the growth of twinned r-BN on various SiC polytypes at 1500 °C, using H2 as carrier gas and triethyl boron and ammonia as precursors with an N/B ratio of ~ 640. The epitaxial relation with various substrates is determined from XRD and TEM. Adding Si to the gas phase stabilizes the r-BN phase but does not alter the electric properties of the material which remains electrically insulating.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2014
EditorsDidier Chaussende, Gabriel Ferro
PublisherTrans Tech Publications Ltd
Pages990-994
Number of pages5
ISBN (Print)9783038354789
DOIs
Publication statusPublished - Jan 1 2015
EventEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014 - Grenoble, France
Duration: Sep 21 2014Sep 25 2014

Publication series

NameMaterials Science Forum
Volume821-823
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

OtherEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014
CountryFrance
CityGrenoble
Period9/21/149/25/14

Keywords

  • Boron nitride
  • CVD
  • Hexagonal
  • Insulating
  • Rhombohedral
  • Sp2
  • XRD

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Chubarov, M., Pedersen, H., Högberg, H., Garbrecht, M., Czigány, Z., Andersson, S. G., & Henry, A. (2015). Chemical vapor deposition of boron nitride thin films on SiC. In D. Chaussende, & G. Ferro (Eds.), Silicon Carbide and Related Materials 2014 (pp. 990-994). (Materials Science Forum; Vol. 821-823). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.821-823.990