Chemical structure of silicon-, oxygen- and nitrogen-containing a-C

H films prepared by RF plasma beam CVD

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Si-, SiOx- and SiNx-containing a-C:H films (denoted as DLCSi, DLCSiO and DLCSiN) were deposited respectively from tetramethylsilane, hexamethyldisiloxane and hexamethyldisilazane precursors onto silicon wafer and aluminium substrates by electron cyclotron wave resonance (ECWR) RF plasma beam CVD. The chemical composition and the bonding states of the constituent elements were characterised by X-ray photoelectron spectroscopy and X-ray induced Auger electron spectroscopy. Compared to the composition of the precursors, significant loss of C for each layer and some loss of N for the DLCSiN layers were obtained, while the O/Si ratios for the DLCSiO layers remained practically unaltered. The modified Auger parameter of Si (Si α) decreased with increasing oxygen content and increased with increasing N content for the DLCSiO and DLCSiN layers. Si α was proposed to reflect the degree of crosslinking. For the DLCSiO and DLCSiN layers Si α could be altered by the deposition conditions (self-bias). The appearance of Si-O bonds was inferred from the valence band analysis of an Ar+ ion bombarded DLCSi layer containing O-contamination.

Original languageEnglish
Pages (from-to)183-187
Number of pages5
JournalThin Solid Films
Volume482
Issue number1-2
DOIs
Publication statusPublished - Jun 22 2005

Fingerprint

Silicon
Chemical vapor deposition
Nitrogen
vapor deposition
Oxygen
Plasmas
nitrogen
Cyclotrons
silicon
oxygen
Auger electron spectroscopy
Valence bands
Aluminum
Chemical analysis
Silicon wafers
Crosslinking
Contamination
X ray photoelectron spectroscopy
Ions
X rays

Keywords

  • Auger parameter
  • Diamond-like carbon
  • Silicon
  • XPS

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

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title = "Chemical structure of silicon-, oxygen- and nitrogen-containing a-C: H films prepared by RF plasma beam CVD",
abstract = "Si-, SiOx- and SiNx-containing a-C:H films (denoted as DLCSi, DLCSiO and DLCSiN) were deposited respectively from tetramethylsilane, hexamethyldisiloxane and hexamethyldisilazane precursors onto silicon wafer and aluminium substrates by electron cyclotron wave resonance (ECWR) RF plasma beam CVD. The chemical composition and the bonding states of the constituent elements were characterised by X-ray photoelectron spectroscopy and X-ray induced Auger electron spectroscopy. Compared to the composition of the precursors, significant loss of C for each layer and some loss of N for the DLCSiN layers were obtained, while the O/Si ratios for the DLCSiO layers remained practically unaltered. The modified Auger parameter of Si (Si α) decreased with increasing oxygen content and increased with increasing N content for the DLCSiO and DLCSiN layers. Si α was proposed to reflect the degree of crosslinking. For the DLCSiO and DLCSiN layers Si α could be altered by the deposition conditions (self-bias). The appearance of Si-O bonds was inferred from the valence band analysis of an Ar+ ion bombarded DLCSi layer containing O-contamination.",
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T1 - Chemical structure of silicon-, oxygen- and nitrogen-containing a-C

T2 - H films prepared by RF plasma beam CVD

AU - Tóth, A.

AU - Mohai, M.

AU - Ujvári, T.

AU - Bertóti, I.

PY - 2005/6/22

Y1 - 2005/6/22

N2 - Si-, SiOx- and SiNx-containing a-C:H films (denoted as DLCSi, DLCSiO and DLCSiN) were deposited respectively from tetramethylsilane, hexamethyldisiloxane and hexamethyldisilazane precursors onto silicon wafer and aluminium substrates by electron cyclotron wave resonance (ECWR) RF plasma beam CVD. The chemical composition and the bonding states of the constituent elements were characterised by X-ray photoelectron spectroscopy and X-ray induced Auger electron spectroscopy. Compared to the composition of the precursors, significant loss of C for each layer and some loss of N for the DLCSiN layers were obtained, while the O/Si ratios for the DLCSiO layers remained practically unaltered. The modified Auger parameter of Si (Si α) decreased with increasing oxygen content and increased with increasing N content for the DLCSiO and DLCSiN layers. Si α was proposed to reflect the degree of crosslinking. For the DLCSiO and DLCSiN layers Si α could be altered by the deposition conditions (self-bias). The appearance of Si-O bonds was inferred from the valence band analysis of an Ar+ ion bombarded DLCSi layer containing O-contamination.

AB - Si-, SiOx- and SiNx-containing a-C:H films (denoted as DLCSi, DLCSiO and DLCSiN) were deposited respectively from tetramethylsilane, hexamethyldisiloxane and hexamethyldisilazane precursors onto silicon wafer and aluminium substrates by electron cyclotron wave resonance (ECWR) RF plasma beam CVD. The chemical composition and the bonding states of the constituent elements were characterised by X-ray photoelectron spectroscopy and X-ray induced Auger electron spectroscopy. Compared to the composition of the precursors, significant loss of C for each layer and some loss of N for the DLCSiN layers were obtained, while the O/Si ratios for the DLCSiO layers remained practically unaltered. The modified Auger parameter of Si (Si α) decreased with increasing oxygen content and increased with increasing N content for the DLCSiO and DLCSiN layers. Si α was proposed to reflect the degree of crosslinking. For the DLCSiO and DLCSiN layers Si α could be altered by the deposition conditions (self-bias). The appearance of Si-O bonds was inferred from the valence band analysis of an Ar+ ion bombarded DLCSi layer containing O-contamination.

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KW - Diamond-like carbon

KW - Silicon

KW - XPS

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