Chemical state analysis of surface and interface segregates in coevaporated Al-Sn-O systems

L. Kövér, P. Barna, R. Sanjinés, Zs Kovács, G. Margaritondo, M. Adamik, Zs Radi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Al-Sn layer structures were prepared by simultaneous evaporation of Al and Sn onto predeposited Al layers prepared on SiO2-covered Si wafer substrates, at a substrate temperature of 470 K and an oxygen partial pressure of 3 × 10-3 Pa. The chemical state, the morphology and the lateral distribution of the species formed on the surface were studied by high resolution XPS and STM, respectively, while the cross-section of the layer system was investigated by transmission electron microscopy. Our present results confirm that Sn segregates to the surface of the growing film and partly forms fine Sn grains covered with a thin SnO2 layer on the surface of the growing Al crystals together with an Al2O3 phase.

Original languageEnglish
Pages (from-to)90-93
Number of pages4
JournalThin Solid Films
Volume281-282
Issue number1-2
DOIs
Publication statusPublished - Aug 1 1996

Fingerprint

Film growth
Substrates
Crystal growth
Partial pressure
Evaporation
X ray photoelectron spectroscopy
Oxygen
Transmission electron microscopy
partial pressure
evaporation
wafers
transmission electron microscopy
high resolution
cross sections
oxygen
crystals
Temperature
temperature

Keywords

  • Chemical state
  • Segregation
  • STM
  • Tin
  • XPS

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Chemical state analysis of surface and interface segregates in coevaporated Al-Sn-O systems. / Kövér, L.; Barna, P.; Sanjinés, R.; Kovács, Zs; Margaritondo, G.; Adamik, M.; Radi, Zs.

In: Thin Solid Films, Vol. 281-282, No. 1-2, 01.08.1996, p. 90-93.

Research output: Contribution to journalArticle

Kövér, L. ; Barna, P. ; Sanjinés, R. ; Kovács, Zs ; Margaritondo, G. ; Adamik, M. ; Radi, Zs. / Chemical state analysis of surface and interface segregates in coevaporated Al-Sn-O systems. In: Thin Solid Films. 1996 ; Vol. 281-282, No. 1-2. pp. 90-93.
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