Chemical analysis of a-CNx thin films synthesized by nanosecond and femtosecond pulsed laser deposition

T. Szörényi, E. Fogarassy, C. Fuchs, J. Hommet, F. Le Normand

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An ArF excimer laser (22 ns, 193 nm) and a hybrid dye/excimer laser system (500 fs, 248 nm) are used to deposit amorphous carbon nitride films at room temperature by ablation of a graphite target in nitrogen atmosphere. The chemical composition and structure of the films is characterized by X-ray photoelectron spectroscopy. In the nanosecond case, the nitrogen content increases with reactive gas pressure up to 45 atomic %, while in the subpicosecond case it remains below 7 at. %. When processed with nanosecond pulses, the films' nitrogen content steeply increases with fluence up to a maximum. The target-to-substrate distance has only minor influence on the amount of nitrogen incorporated into the films. The dependence of the carbon-carbon and carbon-nitrogen bond configurations on the processing parameters is also given.

Original languageEnglish
Pages (from-to)S941-S944
JournalApplied Physics A: Materials Science and Processing
Issue number7
Publication statusPublished - Jan 1 1999


ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

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