Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering

S. Levichev, A. Chahboun, P. Basa, A. G. Rolo, N. P. Barradas, E. Alves, Zs J. Horvath, O. Conde, M. J.M. Gomes

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Charging effects in CdSe nanocrystals embedded in SiO2 matrix fabricated by rf magnetron co-sputtering technique were electrically characterized by means of capacitance-voltage (C-V) combined with current-voltage (I-V). The presence of CdSe nanocrystals was demonstrated by X-ray diffraction technique. The average size of nanocrystals was found to be approximately 3 nm. The carriers transport in the CdSe/SiO2 structure was shown to be a combination of Fowler-Nordheim tunnelling and Poole-Frenkel mechanisms. A memory effect was demonstrated and a retention time was measured.

Original languageEnglish
Pages (from-to)2374-2377
Number of pages4
JournalMicroelectronic Engineering
Volume85
Issue number12
DOIs
Publication statusPublished - Dec 1 2008

Keywords

  • CdSe
  • Charging effect
  • Nanocrystals
  • SiO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Charging effects in CdSe nanocrystals embedded in SiO<sub>2</sub> matrix produced by rf magnetron sputtering'. Together they form a unique fingerprint.

  • Cite this

    Levichev, S., Chahboun, A., Basa, P., Rolo, A. G., Barradas, N. P., Alves, E., Horvath, Z. J., Conde, O., & Gomes, M. J. M. (2008). Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering. Microelectronic Engineering, 85(12), 2374-2377. https://doi.org/10.1016/j.mee.2008.09.003