Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering

S. Levichev, A. Chahboun, P. Basa, A. G. Rolo, N. P. Barradas, E. Alves, Z. Horváth, O. Conde, M. J M Gomes

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Charging effects in CdSe nanocrystals embedded in SiO2 matrix fabricated by rf magnetron co-sputtering technique were electrically characterized by means of capacitance-voltage (C-V) combined with current-voltage (I-V). The presence of CdSe nanocrystals was demonstrated by X-ray diffraction technique. The average size of nanocrystals was found to be approximately 3 nm. The carriers transport in the CdSe/SiO2 structure was shown to be a combination of Fowler-Nordheim tunnelling and Poole-Frenkel mechanisms. A memory effect was demonstrated and a retention time was measured.

Original languageEnglish
Pages (from-to)2374-2377
Number of pages4
JournalMicroelectronic Engineering
Volume85
Issue number12
DOIs
Publication statusPublished - Dec 2008

Fingerprint

Magnetron sputtering
Nanocrystals
charging
magnetron sputtering
nanocrystals
matrices
Carrier transport
Electric potential
electric potential
Field emission
Sputtering
Capacitance
sputtering
capacitance
Data storage equipment
X ray diffraction
diffraction
x rays

Keywords

  • CdSe
  • Charging effect
  • Nanocrystals
  • SiO

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Levichev, S., Chahboun, A., Basa, P., Rolo, A. G., Barradas, N. P., Alves, E., ... Gomes, M. J. M. (2008). Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering. Microelectronic Engineering, 85(12), 2374-2377. https://doi.org/10.1016/j.mee.2008.09.003

Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering. / Levichev, S.; Chahboun, A.; Basa, P.; Rolo, A. G.; Barradas, N. P.; Alves, E.; Horváth, Z.; Conde, O.; Gomes, M. J M.

In: Microelectronic Engineering, Vol. 85, No. 12, 12.2008, p. 2374-2377.

Research output: Contribution to journalArticle

Levichev, S, Chahboun, A, Basa, P, Rolo, AG, Barradas, NP, Alves, E, Horváth, Z, Conde, O & Gomes, MJM 2008, 'Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering', Microelectronic Engineering, vol. 85, no. 12, pp. 2374-2377. https://doi.org/10.1016/j.mee.2008.09.003
Levichev, S. ; Chahboun, A. ; Basa, P. ; Rolo, A. G. ; Barradas, N. P. ; Alves, E. ; Horváth, Z. ; Conde, O. ; Gomes, M. J M. / Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering. In: Microelectronic Engineering. 2008 ; Vol. 85, No. 12. pp. 2374-2377.
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