Abstract
Charging behaviour of MNOS structures containing Ge nanocrytals embedded at the SiO 2/Si 3N 4 interface are studied by experiments and by calculating tunnelling probabilities of electrons and holes to the conductance or valence band of the nitride layer, respectively, for structures with and without nanocrystals. It is concluded that the optimal charging behaviour of MNOS structures without nanocrystals can be expected for an oxide thickness of 2-3 nm. The presence of semiconductor nanocrystals at the SiO 2/Si 3N 4 interface enhances strongly the tunnelling probability of electrons and holes for structures with thin oxide layers (2-3 nm) at low electric fields, but they do not influence the charging behaviour of structures at high electric fields. The results of calculations are in agreement with the experimental results obtained on MNOS structures with Ge nanocrystals.
| Original language | English |
|---|---|
| Pages (from-to) | 1370-1373 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 9 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - Jun 2012 |
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Keywords
- Ge nanocrystals
- MNOS
- Non-volatile memory
- Silicon nitride
- Tunnelling
ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Charging behaviour of MNOS structures with embedded Ge nanocrystals. / Horváth, Z.; Molnár, Károly Zs; Molnár, G.; Basa, Péter; Jászi, Tamás; Pap, A.; Lovassy, Rita; Turmezei, Péter.
In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 9, No. 6, 06.2012, p. 1370-1373.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Charging behaviour of MNOS structures with embedded Ge nanocrystals
AU - Horváth, Z.
AU - Molnár, Károly Zs
AU - Molnár, G.
AU - Basa, Péter
AU - Jászi, Tamás
AU - Pap, A.
AU - Lovassy, Rita
AU - Turmezei, Péter
PY - 2012/6
Y1 - 2012/6
N2 - Charging behaviour of MNOS structures containing Ge nanocrytals embedded at the SiO 2/Si 3N 4 interface are studied by experiments and by calculating tunnelling probabilities of electrons and holes to the conductance or valence band of the nitride layer, respectively, for structures with and without nanocrystals. It is concluded that the optimal charging behaviour of MNOS structures without nanocrystals can be expected for an oxide thickness of 2-3 nm. The presence of semiconductor nanocrystals at the SiO 2/Si 3N 4 interface enhances strongly the tunnelling probability of electrons and holes for structures with thin oxide layers (2-3 nm) at low electric fields, but they do not influence the charging behaviour of structures at high electric fields. The results of calculations are in agreement with the experimental results obtained on MNOS structures with Ge nanocrystals.
AB - Charging behaviour of MNOS structures containing Ge nanocrytals embedded at the SiO 2/Si 3N 4 interface are studied by experiments and by calculating tunnelling probabilities of electrons and holes to the conductance or valence band of the nitride layer, respectively, for structures with and without nanocrystals. It is concluded that the optimal charging behaviour of MNOS structures without nanocrystals can be expected for an oxide thickness of 2-3 nm. The presence of semiconductor nanocrystals at the SiO 2/Si 3N 4 interface enhances strongly the tunnelling probability of electrons and holes for structures with thin oxide layers (2-3 nm) at low electric fields, but they do not influence the charging behaviour of structures at high electric fields. The results of calculations are in agreement with the experimental results obtained on MNOS structures with Ge nanocrystals.
KW - Ge nanocrystals
KW - MNOS
KW - Non-volatile memory
KW - Silicon nitride
KW - Tunnelling
UR - http://www.scopus.com/inward/record.url?scp=84862003746&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84862003746&partnerID=8YFLogxK
U2 - 10.1002/pssc.201100668
DO - 10.1002/pssc.201100668
M3 - Article
AN - SCOPUS:84862003746
VL - 9
SP - 1370
EP - 1373
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
IS - 6
ER -