Charging behaviour of metal-nitride-oxide-semiconductor memory structures with embedded Si or Ge nanocrystals

Z. Horváth, P. Basa, K. Z. Molnár, T. Jászi, A. Pap, G. Molnár, L. Dobos, L. Tóth, B. Pécz

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Charging behaviour of MNOS structures containing semiconductor nanocrytals embedded at the SiO2/Si3N4 interface are studied by calculating tunneling probabilities of electrons and holes to the nanocrystals or to the conductance or valence band of the nitride layer, respectively, for structures with and without nanocrystals. The dependence of probability on the oxide thickness and electric field is discussed in terms of charge injection mechanisms. It is concluded that the optimal charging behaviour of MNOS and SONOS structures without nanocrystals can be expected for an oxide thickness of 2-3 nm. The presence of semiconductor nanocrystals at the SiO 2/Si3N4 interface enhances strongly the tunneling probability of electrons and holes for structures with thin oxide layers (3 nm or below) or at low electric fields, but they do not influence the charging behaviour of structures with thick oxide layers at high electric fields. The results of calculations are in agreement with the experimental results obtained on MNOS structures with Si or Ge nanocrystals.

Original languageEnglish
Pages (from-to)513-517
Number of pages5
JournalNanoscience and Nanotechnology Letters
Volume5
Issue number4
DOIs
Publication statusPublished - Apr 2013

Fingerprint

Nitrides
Nanocrystals
Metals
Oxides
Data storage equipment
Electric fields
Semiconductor materials
Charge injection
Electron tunneling
Electrons
Valence bands
Oxide semiconductors
silicon nitride

Keywords

  • MNOS
  • Semiconductor nanocrystals
  • SONOS
  • Tunneling probability

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

@article{658c2a72ca294ca2bf286270d4e32bed,
title = "Charging behaviour of metal-nitride-oxide-semiconductor memory structures with embedded Si or Ge nanocrystals",
abstract = "Charging behaviour of MNOS structures containing semiconductor nanocrytals embedded at the SiO2/Si3N4 interface are studied by calculating tunneling probabilities of electrons and holes to the nanocrystals or to the conductance or valence band of the nitride layer, respectively, for structures with and without nanocrystals. The dependence of probability on the oxide thickness and electric field is discussed in terms of charge injection mechanisms. It is concluded that the optimal charging behaviour of MNOS and SONOS structures without nanocrystals can be expected for an oxide thickness of 2-3 nm. The presence of semiconductor nanocrystals at the SiO 2/Si3N4 interface enhances strongly the tunneling probability of electrons and holes for structures with thin oxide layers (3 nm or below) or at low electric fields, but they do not influence the charging behaviour of structures with thick oxide layers at high electric fields. The results of calculations are in agreement with the experimental results obtained on MNOS structures with Si or Ge nanocrystals.",
keywords = "MNOS, Semiconductor nanocrystals, SONOS, Tunneling probability",
author = "Z. Horv{\'a}th and P. Basa and Moln{\'a}r, {K. Z.} and T. J{\'a}szi and A. Pap and G. Moln{\'a}r and L. Dobos and L. T{\'o}th and B. P{\'e}cz",
year = "2013",
month = "4",
doi = "10.1166/nnl.2013.1560",
language = "English",
volume = "5",
pages = "513--517",
journal = "Nanoscience and Nanotechnology Letters",
issn = "1941-4900",
publisher = "American Scientific Publishers",
number = "4",

}

TY - JOUR

T1 - Charging behaviour of metal-nitride-oxide-semiconductor memory structures with embedded Si or Ge nanocrystals

AU - Horváth, Z.

AU - Basa, P.

AU - Molnár, K. Z.

AU - Jászi, T.

AU - Pap, A.

AU - Molnár, G.

AU - Dobos, L.

AU - Tóth, L.

AU - Pécz, B.

PY - 2013/4

Y1 - 2013/4

N2 - Charging behaviour of MNOS structures containing semiconductor nanocrytals embedded at the SiO2/Si3N4 interface are studied by calculating tunneling probabilities of electrons and holes to the nanocrystals or to the conductance or valence band of the nitride layer, respectively, for structures with and without nanocrystals. The dependence of probability on the oxide thickness and electric field is discussed in terms of charge injection mechanisms. It is concluded that the optimal charging behaviour of MNOS and SONOS structures without nanocrystals can be expected for an oxide thickness of 2-3 nm. The presence of semiconductor nanocrystals at the SiO 2/Si3N4 interface enhances strongly the tunneling probability of electrons and holes for structures with thin oxide layers (3 nm or below) or at low electric fields, but they do not influence the charging behaviour of structures with thick oxide layers at high electric fields. The results of calculations are in agreement with the experimental results obtained on MNOS structures with Si or Ge nanocrystals.

AB - Charging behaviour of MNOS structures containing semiconductor nanocrytals embedded at the SiO2/Si3N4 interface are studied by calculating tunneling probabilities of electrons and holes to the nanocrystals or to the conductance or valence band of the nitride layer, respectively, for structures with and without nanocrystals. The dependence of probability on the oxide thickness and electric field is discussed in terms of charge injection mechanisms. It is concluded that the optimal charging behaviour of MNOS and SONOS structures without nanocrystals can be expected for an oxide thickness of 2-3 nm. The presence of semiconductor nanocrystals at the SiO 2/Si3N4 interface enhances strongly the tunneling probability of electrons and holes for structures with thin oxide layers (3 nm or below) or at low electric fields, but they do not influence the charging behaviour of structures with thick oxide layers at high electric fields. The results of calculations are in agreement with the experimental results obtained on MNOS structures with Si or Ge nanocrystals.

KW - MNOS

KW - Semiconductor nanocrystals

KW - SONOS

KW - Tunneling probability

UR - http://www.scopus.com/inward/record.url?scp=84877769989&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84877769989&partnerID=8YFLogxK

U2 - 10.1166/nnl.2013.1560

DO - 10.1166/nnl.2013.1560

M3 - Article

AN - SCOPUS:84877769989

VL - 5

SP - 513

EP - 517

JO - Nanoscience and Nanotechnology Letters

JF - Nanoscience and Nanotechnology Letters

SN - 1941-4900

IS - 4

ER -