Charge transport in microcrystalline silicon films

D. Ruff, H. Mell, L. Tóth, I. Sieber, W. Fuhs

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

We prepared a series of nominally undoped microcrystalline silicon (μc-Si:H) films in a conventional radio frequency plasma enhanced chemical vapor deposition reactor from silane diluted with hydrogen. To investigate the transport mechanism we carried out measurements of the dark conductivity, σd, Hall mobility, μH, and thermoelectric power, S, in the temperature range 200 to 450 K. The activated temperature dependences of μH and of a quantity, Q, derived from σd and S indicate that the transport properties are determined by an inhomogeneous distribution of the charge carriers (electrons). We analyze our results in terms of two models. The first one assumes potential barriers, not at the grain boundaries but at the interfaces of the columns which are typical for μc-Si:H. In the second model inhomogeneously distributed charged centers give rise to potential fluctuations. Both models can equally well account for our experimental data.

Original languageEnglish
Pages (from-to)1011-1015
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume227-230
Issue numberPART 2
DOIs
Publication statusPublished - May 1998

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Keywords

  • Charge transport
  • PECVD
  • μc-Si:H

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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