Charge transport in microcrystalline silicon films

D. Ruff, H. Mell, L. Tóth, I. Sieber, W. Fuhs

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

We prepared a series of nominally undoped microcrystalline silicon (μc-Si:H) films in a conventional radio frequency plasma enhanced chemical vapor deposition reactor from silane diluted with hydrogen. To investigate the transport mechanism we carried out measurements of the dark conductivity, σd, Hall mobility, μH, and thermoelectric power, S, in the temperature range 200 to 450 K. The activated temperature dependences of μH and of a quantity, Q, derived from σd and S indicate that the transport properties are determined by an inhomogeneous distribution of the charge carriers (electrons). We analyze our results in terms of two models. The first one assumes potential barriers, not at the grain boundaries but at the interfaces of the columns which are typical for μc-Si:H. In the second model inhomogeneously distributed charged centers give rise to potential fluctuations. Both models can equally well account for our experimental data.

Original languageEnglish
Pages (from-to)1011-1015
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume227-230
Issue numberPART 2
Publication statusPublished - May 1998

Fingerprint

Microcrystalline silicon
silicon films
Charge transfer
Silanes
Hall mobility
Thermoelectric power
Plasma enhanced chemical vapor deposition
Charge carriers
silanes
Transport properties
charge carriers
Hydrogen
radio frequencies
Grain boundaries
grain boundaries
transport properties
reactors
vapor deposition
conductivity
Temperature

Keywords

  • μc-Si:H
  • Charge transport
  • PECVD

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Ruff, D., Mell, H., Tóth, L., Sieber, I., & Fuhs, W. (1998). Charge transport in microcrystalline silicon films. Journal of Non-Crystalline Solids, 227-230(PART 2), 1011-1015.

Charge transport in microcrystalline silicon films. / Ruff, D.; Mell, H.; Tóth, L.; Sieber, I.; Fuhs, W.

In: Journal of Non-Crystalline Solids, Vol. 227-230, No. PART 2, 05.1998, p. 1011-1015.

Research output: Contribution to journalArticle

Ruff, D, Mell, H, Tóth, L, Sieber, I & Fuhs, W 1998, 'Charge transport in microcrystalline silicon films', Journal of Non-Crystalline Solids, vol. 227-230, no. PART 2, pp. 1011-1015.
Ruff D, Mell H, Tóth L, Sieber I, Fuhs W. Charge transport in microcrystalline silicon films. Journal of Non-Crystalline Solids. 1998 May;227-230(PART 2):1011-1015.
Ruff, D. ; Mell, H. ; Tóth, L. ; Sieber, I. ; Fuhs, W. / Charge transport in microcrystalline silicon films. In: Journal of Non-Crystalline Solids. 1998 ; Vol. 227-230, No. PART 2. pp. 1011-1015.
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