Charge state dependent darkening in AsSe thin films induced by slow multiply charged Ne ions

Research output: Contribution to journalArticle

Abstract

A charge state dependent effect of ion bombardment on the optical absorbance of AsSe thin films irradiated with 120 keV Neq+ (q = 4...8) ions have been observed and traced back to the charge state dependence of the modified layer thickness and projected range of the ions. The projected range decreases by about 20 % with increase of the ion's initial charge state from 4 to 8. The elongation of charge equilibration for highly charged ions in a solid matter is discussed as a possible reason.

Original languageEnglish
Pages (from-to)2008-2010
Number of pages3
JournalJournal of Optoelectronics and Advanced Materials
Volume11
Issue number12
Publication statusPublished - Dec 1 2009

Keywords

  • AsSe
  • Ne ions
  • Optical absorbance
  • Thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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