Charge injection and storage behaviour of MNOS structures

Z. Horváth, G. Stubnya, P. Tutto, M. Nemeth-Sallay, J. Balazs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The charge injection and storage behavior are studied for metal-nitride-oxide-silicon (MNOS) structures using memory hysteresis measurements. These characteristics are studied as a function of the oxide thickness in the range of 2.3-3.7 nm. The results are interpreted in terms of tunneling probability of carriers through the oxide layer.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Volume3975
Publication statusPublished - 2000
EventIWPSD-99: The 10th International Workshop on the Physics of Semiconductor Devices - New Delhi, India
Duration: Dec 14 1999Dec 18 1999

Other

OtherIWPSD-99: The 10th International Workshop on the Physics of Semiconductor Devices
CityNew Delhi, India
Period12/14/9912/18/99

Fingerprint

metal-nitride-oxide-silicon
Charge injection
Silicon oxides
Nitrides
injection
Oxides
oxides
Metals
Hysteresis
hysteresis
Data storage equipment

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Horváth, Z., Stubnya, G., Tutto, P., Nemeth-Sallay, M., & Balazs, J. (2000). Charge injection and storage behaviour of MNOS structures. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 3975). Society of Photo-Optical Instrumentation Engineers.

Charge injection and storage behaviour of MNOS structures. / Horváth, Z.; Stubnya, G.; Tutto, P.; Nemeth-Sallay, M.; Balazs, J.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3975 Society of Photo-Optical Instrumentation Engineers, 2000.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Horváth, Z, Stubnya, G, Tutto, P, Nemeth-Sallay, M & Balazs, J 2000, Charge injection and storage behaviour of MNOS structures. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 3975, Society of Photo-Optical Instrumentation Engineers, IWPSD-99: The 10th International Workshop on the Physics of Semiconductor Devices, New Delhi, India, 12/14/99.
Horváth Z, Stubnya G, Tutto P, Nemeth-Sallay M, Balazs J. Charge injection and storage behaviour of MNOS structures. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3975. Society of Photo-Optical Instrumentation Engineers. 2000
Horváth, Z. ; Stubnya, G. ; Tutto, P. ; Nemeth-Sallay, M. ; Balazs, J. / Charge injection and storage behaviour of MNOS structures. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3975 Society of Photo-Optical Instrumentation Engineers, 2000.
@inproceedings{260931191ceb4c41964dd352ca1c83e4,
title = "Charge injection and storage behaviour of MNOS structures",
abstract = "The charge injection and storage behavior are studied for metal-nitride-oxide-silicon (MNOS) structures using memory hysteresis measurements. These characteristics are studied as a function of the oxide thickness in the range of 2.3-3.7 nm. The results are interpreted in terms of tunneling probability of carriers through the oxide layer.",
author = "Z. Horv{\'a}th and G. Stubnya and P. Tutto and M. Nemeth-Sallay and J. Balazs",
year = "2000",
language = "English",
volume = "3975",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Society of Photo-Optical Instrumentation Engineers",

}

TY - GEN

T1 - Charge injection and storage behaviour of MNOS structures

AU - Horváth, Z.

AU - Stubnya, G.

AU - Tutto, P.

AU - Nemeth-Sallay, M.

AU - Balazs, J.

PY - 2000

Y1 - 2000

N2 - The charge injection and storage behavior are studied for metal-nitride-oxide-silicon (MNOS) structures using memory hysteresis measurements. These characteristics are studied as a function of the oxide thickness in the range of 2.3-3.7 nm. The results are interpreted in terms of tunneling probability of carriers through the oxide layer.

AB - The charge injection and storage behavior are studied for metal-nitride-oxide-silicon (MNOS) structures using memory hysteresis measurements. These characteristics are studied as a function of the oxide thickness in the range of 2.3-3.7 nm. The results are interpreted in terms of tunneling probability of carriers through the oxide layer.

UR - http://www.scopus.com/inward/record.url?scp=0033686486&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033686486&partnerID=8YFLogxK

M3 - Conference contribution

VL - 3975

BT - Proceedings of SPIE - The International Society for Optical Engineering

PB - Society of Photo-Optical Instrumentation Engineers

ER -