Charge carrier localization in pure and doped 1T-TaS2

P. Fazekas, E. Tosatti

Research output: Contribution to journalArticle

103 Citations (Scopus)

Abstract

We review experimental data on the low-temperature behaviour of pure, and cation-doped 1T-TaS2, This suggests that the transition into the commensurate phase is accompanied by Mott-localization while below helium temperatures, conduction proceeds by variable range hopping in disorder-localized states lying in a region where the Mott-Hubbard subbands slightly overlap. Many properties of doped samples can be understood by assuming that the star-shaped atomic clusters characteristic of pure material are preferentially centred on impurities.

Original languageEnglish
Pages (from-to)183-187
Number of pages5
JournalPhysica B+C
Volume99
Issue number1-4
DOIs
Publication statusPublished - Jan 1980

ASJC Scopus subject areas

  • Engineering(all)

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