Charge carrier lifetime modification in silicon by high energy H+, He+ ion implantation

N. Q. Khánh, P. Tüttó, E. N. Jároli, O. Buiu, L. Bíró, F. Pászti, T. Mohácsy, C. Kovacsics, A. Manuaba, J. Gyulai

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

MeV H+ or He+ was implanted into CZ-Si to set carrier lifetime with the aim of customization of power devices. Commercial Microwave Photoconductive Decay (μ-PCD, Semilab, Inc.) equipment was intended to use for wafer characterization. Realistic evaluation of μ-PCD data required a model to handle cases when the probing carrier pocket does not match the desired defect distribution. Parameters of this multilayer model were extracted from vacancy distributions using the TRIM code.

Original languageEnglish
Pages (from-to)101-106
Number of pages6
JournalMaterials Science Forum
Volume248-249
Publication statusPublished - 1997

Fingerprint

Carrier lifetime
Silicon
carrier lifetime
Charge carriers
Ion implantation
ion implantation
charge carriers
silicon
Vacancies
Multilayers
Microwaves
wafers
microwaves
Defects
energy
evaluation
defects
decay

Keywords

  • Charge Carrier Lifetime
  • Excess Charge Pocket
  • Ion Implantation
  • Lifetime Tailoring
  • Microwave Photoconductive Decay (μ-PCD)
  • Radiation Damage
  • Recombination Activity

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Charge carrier lifetime modification in silicon by high energy H+, He+ ion implantation. / Khánh, N. Q.; Tüttó, P.; Jároli, E. N.; Buiu, O.; Bíró, L.; Pászti, F.; Mohácsy, T.; Kovacsics, C.; Manuaba, A.; Gyulai, J.

In: Materials Science Forum, Vol. 248-249, 1997, p. 101-106.

Research output: Contribution to journalArticle

Khánh, NQ, Tüttó, P, Jároli, EN, Buiu, O, Bíró, L, Pászti, F, Mohácsy, T, Kovacsics, C, Manuaba, A & Gyulai, J 1997, 'Charge carrier lifetime modification in silicon by high energy H+, He+ ion implantation', Materials Science Forum, vol. 248-249, pp. 101-106.
Khánh, N. Q. ; Tüttó, P. ; Jároli, E. N. ; Buiu, O. ; Bíró, L. ; Pászti, F. ; Mohácsy, T. ; Kovacsics, C. ; Manuaba, A. ; Gyulai, J. / Charge carrier lifetime modification in silicon by high energy H+, He+ ion implantation. In: Materials Science Forum. 1997 ; Vol. 248-249. pp. 101-106.
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AU - Bíró, L.

AU - Pászti, F.

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AU - Gyulai, J.

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