Characterization of ZnO structures by optical and X-ray methods

P. Petrik, B. Pollakowski, S. Zakel, T. Gumprecht, B. Beckhoff, M. Lemberger, Z. Labadi, Z. Baji, M. Jank, A. Nutsch

Research output: Contribution to journalArticle

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Abstract

ZnO thin films doped by Ga and In as well as multilayer structures of ZnO/Al2O3 have been investigated by X-ray fluorescence, Raman spectrometry, spectroscopic ellipsometry and vacuum ultra violet reflectometry. Systematic changes in the optical properties have been revealed even for Ga concentrations below 1%. The Raman active phonon mode of Ga doping at 580 cm-1 shows a correlation with the Ga concentration. Optical models with surface nanoroughness correction and different parameterizations of the dielectric function have been investigated. There was a good agreement between the dielectric functions determined by the Herzinger-Johs polynomial parameterization and by direct inversion. It has been shown that the correction of the nanoroughness significantly influences the accuracy of the determination of the layer properties. The band gap and peak amplitude of the imaginary part of the dielectric function corresponding to the excitonic transition changes systematically with the Ga-content and with annealing even for low concentrations.

Original languageEnglish
Pages (from-to)123-128
Number of pages6
JournalApplied Surface Science
Volume281
DOIs
Publication statusPublished - Sep 15 2013

Fingerprint

Parameterization
X rays
Spectroscopic ellipsometry
Spectrometry
Multilayers
Energy gap
Optical properties
Fluorescence
Doping (additives)
Polynomials
Vacuum
Annealing
Thin films

Keywords

  • Atomic layer deposition
  • Raman spectrometry
  • Spectroscopic ellipsometry
  • Sputtering
  • VUV reflectometry
  • X-ray fluorescence
  • Zinc oxide

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Petrik, P., Pollakowski, B., Zakel, S., Gumprecht, T., Beckhoff, B., Lemberger, M., ... Nutsch, A. (2013). Characterization of ZnO structures by optical and X-ray methods. Applied Surface Science, 281, 123-128. https://doi.org/10.1016/j.apsusc.2012.12.035

Characterization of ZnO structures by optical and X-ray methods. / Petrik, P.; Pollakowski, B.; Zakel, S.; Gumprecht, T.; Beckhoff, B.; Lemberger, M.; Labadi, Z.; Baji, Z.; Jank, M.; Nutsch, A.

In: Applied Surface Science, Vol. 281, 15.09.2013, p. 123-128.

Research output: Contribution to journalArticle

Petrik, P, Pollakowski, B, Zakel, S, Gumprecht, T, Beckhoff, B, Lemberger, M, Labadi, Z, Baji, Z, Jank, M & Nutsch, A 2013, 'Characterization of ZnO structures by optical and X-ray methods', Applied Surface Science, vol. 281, pp. 123-128. https://doi.org/10.1016/j.apsusc.2012.12.035
Petrik P, Pollakowski B, Zakel S, Gumprecht T, Beckhoff B, Lemberger M et al. Characterization of ZnO structures by optical and X-ray methods. Applied Surface Science. 2013 Sep 15;281:123-128. https://doi.org/10.1016/j.apsusc.2012.12.035
Petrik, P. ; Pollakowski, B. ; Zakel, S. ; Gumprecht, T. ; Beckhoff, B. ; Lemberger, M. ; Labadi, Z. ; Baji, Z. ; Jank, M. ; Nutsch, A. / Characterization of ZnO structures by optical and X-ray methods. In: Applied Surface Science. 2013 ; Vol. 281. pp. 123-128.
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AU - Lemberger, M.

AU - Labadi, Z.

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AB - ZnO thin films doped by Ga and In as well as multilayer structures of ZnO/Al2O3 have been investigated by X-ray fluorescence, Raman spectrometry, spectroscopic ellipsometry and vacuum ultra violet reflectometry. Systematic changes in the optical properties have been revealed even for Ga concentrations below 1%. The Raman active phonon mode of Ga doping at 580 cm-1 shows a correlation with the Ga concentration. Optical models with surface nanoroughness correction and different parameterizations of the dielectric function have been investigated. There was a good agreement between the dielectric functions determined by the Herzinger-Johs polynomial parameterization and by direct inversion. It has been shown that the correction of the nanoroughness significantly influences the accuracy of the determination of the layer properties. The band gap and peak amplitude of the imaginary part of the dielectric function corresponding to the excitonic transition changes systematically with the Ga-content and with annealing even for low concentrations.

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