Copper single crystals deformed in uniaxial compression were investigated by x-ray line profile analysis, and the resulting statistical parameters of the developed dislocation pattern are compared to the fractal dimension of the dislocation network determined by the box-counting method on transmission electron microscope micrograph. The observed correlation between the relative fluctuation of the dislocation density and the fractal dimension of the dislocation pattern is interpreted on the basis of the generalized (fractal) composite model.
|Number of pages||6|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - Jan 1 2000|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics