Characterization of Ru and RuO2 thin films prepared by pulsed metal organic chemical vapor deposition

G. Roeder, C. Manke, P. K. Baumann, S. Petersen, V. Yanev, A. Gschwandtner, G. Ruhl, P. Petrik, M. Schellenberger, L. Pfitzner, H. Ryssel

Research output: Contribution to journalArticle

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Abstract

Ultra-thin ruthenium (Ru) layers were fabricated by pulsed metal organic chemical vapor deposition in an Aixtron Tricent reactor using a metal-organic Ru precursor. Layer deposition was performed on different metal barrier combinations and on Al2O3 dielectric layers used in the fabrication of advanced Metal-Insulator-Metal (MIM) capacitor structures and on thermal SiO2 as reference structure. Ru layers with a thickness of 10 nm were characterized by Spectroscopic Ellipsometry (SE) and additional reference methods such as Transmission Electron Microscopy (TEM), Atomic Force Microscopy (AFM), and X-Ray Reflectometry (XRR). As deposited and in situ annealed Ru layers were characterized by SE applying Drude-Lorentz- and Effective Medium Approximation (EMA) models. It was shown that the deposited layers consist of a Ru-RuO2 bilayer structure. By in situ annealing, the RuO2 layer thickness is reduced and highly pure Ru films are obtained. On the metal barriers the formation of a metal oxide interface, which is related to the deposition process, was determined.

Original languageEnglish
Pages (from-to)1231-1234
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number5
DOIs
Publication statusPublished - 2008

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ruthenium
metalorganic chemical vapor deposition
thin films
metals
ellipsometry
metal oxides
capacitors
reactors
insulators
atomic force microscopy
transmission electron microscopy
fabrication
annealing
approximation
x rays

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Characterization of Ru and RuO2 thin films prepared by pulsed metal organic chemical vapor deposition. / Roeder, G.; Manke, C.; Baumann, P. K.; Petersen, S.; Yanev, V.; Gschwandtner, A.; Ruhl, G.; Petrik, P.; Schellenberger, M.; Pfitzner, L.; Ryssel, H.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 5, No. 5, 2008, p. 1231-1234.

Research output: Contribution to journalArticle

Roeder, G, Manke, C, Baumann, PK, Petersen, S, Yanev, V, Gschwandtner, A, Ruhl, G, Petrik, P, Schellenberger, M, Pfitzner, L & Ryssel, H 2008, 'Characterization of Ru and RuO2 thin films prepared by pulsed metal organic chemical vapor deposition', Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 5, no. 5, pp. 1231-1234. https://doi.org/10.1002/pssc.200777865
Roeder, G. ; Manke, C. ; Baumann, P. K. ; Petersen, S. ; Yanev, V. ; Gschwandtner, A. ; Ruhl, G. ; Petrik, P. ; Schellenberger, M. ; Pfitzner, L. ; Ryssel, H. / Characterization of Ru and RuO2 thin films prepared by pulsed metal organic chemical vapor deposition. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2008 ; Vol. 5, No. 5. pp. 1231-1234.
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