Characterization of plasma-induced damage of selectively recessed GaN/InAlN/AlN/GaN heterostructures using SiCl4 and SF6

Clemens Ostermaier, Gianmauro Pozzovivo, Bernhard Basnar, Werner Schrenk, Jean François Carlin, Marcus Gonschorek, Nicolas Grandjean, Andrej Vincze, L. Tóth, B. Pécz, Gottfried Strasser, Dionyz Pogany, Jan Kuzmik

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We have investigated an inductively coupled plasma etching recipe using SiCl4 and SF6 with a resulting selectivity >10 for GaN in respect to InAlN. The formation of an etch-resistant layer of AlF3 on InAlN required about 1 min and was noticed by a 4-times-higher initial etch rate on bare InAlN barrier high electron mobility transistors (HEMTs). Comparing devices with and without plasma-treatment below the gate showed no degradation in drain current and gate leakage current for plasma exposure durations shorter than 30 s, indicating no plasma-induced damage of the InAlN barrier. Devices etched longer than the required time for the formation of the etch-resistant barrier exhibited a slight decrease in drain current and an increase in gate leakage current which saturated for longer etching-time durations. Finally, we could prove the quality of the recipe by recessing the highly doped 6 nm GaN cap layer of a GaN/InAlN/AlN/GaN heterostructure down to the 2 nm thin InAlN/AlN barrier layer.

Original languageEnglish
Article number116506
JournalJapanese Journal of Applied Physics
Volume49
Issue number11
DOIs
Publication statusPublished - Nov 2010

Fingerprint

Heterojunctions
Drain current
damage
Plasmas
Leakage currents
Plasma etching
Inductively coupled plasma
High electron mobility transistors
leakage
Etching
plasma etching
Degradation
barrier layers
high electron mobility transistors
caps
selectivity
etching
degradation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Ostermaier, C., Pozzovivo, G., Basnar, B., Schrenk, W., Carlin, J. F., Gonschorek, M., ... Kuzmik, J. (2010). Characterization of plasma-induced damage of selectively recessed GaN/InAlN/AlN/GaN heterostructures using SiCl4 and SF6. Japanese Journal of Applied Physics, 49(11), [116506]. https://doi.org/10.1143/JJAP.49.116506

Characterization of plasma-induced damage of selectively recessed GaN/InAlN/AlN/GaN heterostructures using SiCl4 and SF6. / Ostermaier, Clemens; Pozzovivo, Gianmauro; Basnar, Bernhard; Schrenk, Werner; Carlin, Jean François; Gonschorek, Marcus; Grandjean, Nicolas; Vincze, Andrej; Tóth, L.; Pécz, B.; Strasser, Gottfried; Pogany, Dionyz; Kuzmik, Jan.

In: Japanese Journal of Applied Physics, Vol. 49, No. 11, 116506, 11.2010.

Research output: Contribution to journalArticle

Ostermaier, C, Pozzovivo, G, Basnar, B, Schrenk, W, Carlin, JF, Gonschorek, M, Grandjean, N, Vincze, A, Tóth, L, Pécz, B, Strasser, G, Pogany, D & Kuzmik, J 2010, 'Characterization of plasma-induced damage of selectively recessed GaN/InAlN/AlN/GaN heterostructures using SiCl4 and SF6', Japanese Journal of Applied Physics, vol. 49, no. 11, 116506. https://doi.org/10.1143/JJAP.49.116506
Ostermaier, Clemens ; Pozzovivo, Gianmauro ; Basnar, Bernhard ; Schrenk, Werner ; Carlin, Jean François ; Gonschorek, Marcus ; Grandjean, Nicolas ; Vincze, Andrej ; Tóth, L. ; Pécz, B. ; Strasser, Gottfried ; Pogany, Dionyz ; Kuzmik, Jan. / Characterization of plasma-induced damage of selectively recessed GaN/InAlN/AlN/GaN heterostructures using SiCl4 and SF6. In: Japanese Journal of Applied Physics. 2010 ; Vol. 49, No. 11.
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