Characterization of near surface region of plasma immersion ion-implanted silicon using Rutherford backscattering spectrometry, transmission electron microscopy and spectroscopic ellipsometry

Essam Ramadan Shaaban, T. Lohner, I. Pintér, P. Petrik, N. Q. Khánh, Z. E. Horváth, J. Gyulai

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Plasma immersion ion implantation (PIII) exploits the basic advantages of ion implantation using the simplest equipment, direct extraction of ions from a plasma and implantation into a surface. In the present study comparative investigations were performed using high-depth-resolution Rutherford backscattering, cross-sectional transmission electron microscopy and spectroscopic ellipsometry to analyze the composition of the topmost layer and to investigate structural modification caused by PIII in single crystalline silicon.

Original languageEnglish
Pages (from-to)27-31
Number of pages5
JournalVacuum
Volume71
Issue number1-2 SPEC.
DOIs
Publication statusPublished - May 9 2003

    Fingerprint

Keywords

  • Cross-sectional transmission electron microscopy
  • Ion beam analysis
  • Plasma immersion ion implantation
  • Spectroscopic ellipsometry

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

Cite this