Characterization of ion implanted silicon by ellipsometry and channeling

T. Lohner, G. Mezey, E. Kótai, F. Pászti, A. Manuaba, J. Gyulai

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

A correlation between the amount of disorder measured by channeling and the trajectory of measured ellipsometric angles (ψ, Δ) is reported. The implantation was performed by 11B+, 28Si+, 31P+, 40Ar+, 72Ge+, 75As+, 209Bi+ ions at room temperature. For fully amorphous samples the thickness data were obtained from channeling and the complex refractive index from a 145 nm thick amorphous layer. These experimental values were used to compute a theoretical curve in the ψ-Δ plane. The good agreement between the theoretical curve and experimental data provides a fast and non-destructive and non-contact method for estimating the thickness of an amorphous layer. For buried and partially disordered layers a qualitative interpretation of different trajectories depending on the ion species and other implantation condition such as energy and dose in the ψ-Δ plane can be given, in certain cases, on the basis of channeling measurements. It is also pointed out that plasma stripping, removes the polymerized hydrocarbon film without affecting the disordered layer, plays an important role in preparing implanted samples for ellipsometry.

Original languageEnglish
Pages (from-to)615-620
Number of pages6
JournalNuclear Instruments and Methods In Physics Research
Volume209-210
Issue numberPART 2
DOIs
Publication statusPublished - 1983

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