Characterization of ion-implanted silicion by Rutherford backscattering spectrometry and ellipsometry

T. Lohner, E. Kótai, F. Pászti, A. Manuaba, M. Fried, J. Gyulai

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

It is demonstrated that the information obtained by Rutherford backscattering spectrometry and channeling technique can substantially help in the construction of a realistic optical model for the ellipsometry of ion-implanted silicon. In the case of fully amorphous ion-bombarded layers, the ellipsometry is a fast, non-destructive and contactless method to estimate the thickness of these films. For buried and partially disordered layers a qualitative interpretation of different trajectories in the Ψ-Δ plance can be given on the basis of channeling measurements.

Original languageEnglish
Pages (from-to)75-81
Number of pages7
JournalJournal of Radioanalytical and Nuclear Chemistry Articles
Volume83
Issue number1
DOIs
Publication statusPublished - Jul 1 1984

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ASJC Scopus subject areas

  • Analytical Chemistry
  • Nuclear Energy and Engineering
  • Radiology Nuclear Medicine and imaging
  • Pollution
  • Spectroscopy
  • Public Health, Environmental and Occupational Health
  • Health, Toxicology and Mutagenesis

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