Characterization of ion-implanted Si by electronic and structural data

G. Pető, T. Lohner, J. Kanski

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Abstract

Si was ion implanted with ions of various masses (11B+, 28Si+, 31P+, 75As+ and 121Sb+) with different energies. The damaged layer was measured by UPS, RBS and optical methods. The electronic structure of 11B+ and 31P+ differed. The damage profile of the ion implanted layer is not step-like for all implanted ions and it has a double peak for 11B+ as given by electronic data. These results are only partly consistent with the structural results given by RBS.

Original languageEnglish
Pages (from-to)447-452
Number of pages6
JournalNuclear Instruments and Methods In Physics Research
Volume209-210
Issue numberPART 1
DOIs
Publication statusPublished - 1983

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Characterization of ion-implanted Si by electronic and structural data. / Pető, G.; Lohner, T.; Kanski, J.

In: Nuclear Instruments and Methods In Physics Research, Vol. 209-210, No. PART 1, 1983, p. 447-452.

Research output: Contribution to journalArticle

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