Characterization of in-depth cavity distribution after thermal annealing of helium-implanted silicon and gallium nitride

B. Fodor, F. Cayrel, E. Agocs, D. Alquier, M. Fried, P. Petrik

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Single-crystalline silicon wafers covered with sacrificial oxide layer and epitaxially grown gallium nitride layers were implanted with high-fluence helium ions (2-6 × 1016 cm- 2) at energies of 20-30 keV. Thermal annealings at 650-1000 °C, 1 h were performed on the Si samples and rapid thermal annealings at 600-1000 °C, 120 s under N2 were performed on the GaN samples. The as-implanted samples and the near-surface cavity distributions of the annealed samples were investigated with variable angle spectroscopic ellipsometry. In-depth defect profiles and cavity profiles can be best described with multiple independent effective medium sublayers of varying ratio of single-crystal/void. The number of sublayers was chosen to maximize the fit quality without a high parameter cross-correlation. The dependence of the implantation fluence, oxide layer thickness and annealing temperature on the cavity distribution was separately investigated. The ellipsometric fitted distributions were compared and cross-checked with analyses of transmission electron micrographs where the average surface cavity was determined sublayer by sublayer. The in-depth profiles were also compared with simulations of He and vacancy distributions.

Original languageEnglish
Pages (from-to)567-572
Number of pages6
JournalThin Solid Films
Volume571
Issue numberP3
DOIs
Publication statusPublished - Nov 28 2014

Fingerprint

Gallium nitride
Helium
gallium nitrides
Silicon nitride
silicon nitrides
Oxides
helium
Annealing
cavities
annealing
Spectroscopic ellipsometry
Rapid thermal annealing
Silicon wafers
Vacancies
fluence
profiles
Single crystals
Ions
Crystalline materials
Defects

Keywords

  • Annealing
  • Cavity
  • Depth profile
  • Ion-implantation
  • Spectroscopic ellipsometry

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Characterization of in-depth cavity distribution after thermal annealing of helium-implanted silicon and gallium nitride. / Fodor, B.; Cayrel, F.; Agocs, E.; Alquier, D.; Fried, M.; Petrik, P.

In: Thin Solid Films, Vol. 571, No. P3, 28.11.2014, p. 567-572.

Research output: Contribution to journalArticle

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AU - Agocs, E.

AU - Alquier, D.

AU - Fried, M.

AU - Petrik, P.

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