Characterization of high-quality free-standing GaN grown by HVPE

D. Gogova, A. Kasic, H. Larsson, B. Pécz, R. Yakimova, I. G. Ivanov, B. Monemar

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Single-crystalline 330μm thick GaN has been grown on 2'' Al 2O3 (0 0 0 1) by hydride vapour phase epitaxy (HVPE). Upon laser-induced lift-off the GaN was delaminated from the sapphire substrate, and bulk-like free-standing GaN was achieved. Various characterization methods were utilized to assess the structural and optical quality of the freestanding material. The X-ray rocking curves of the (1 0-1 4) and (0 0 0 2) diffraction peaks revealed full width at half maximum (FWHM) values of 96 and 129arcsec, respectively. These data compare well with the smallest corresponding values published so far for bulk-like HVPE-GaN. The dislocation density determined by plan-view transmission electron microscopy studies is 1-2 × 10 7cm-2. The low-temperature near-band-gap photoluminescence spectrum shows the main donor bound exciton (DBE) peak at 3.4718eV with a FWHM of 1.4meV, verifying the high crystalline quality of the bulk-like GaN. The DBE peak position suggests complete stress relief. The phonon spectra measured by infrared spectroscopic ellipsometry confirm as well, that the free-standing material is of high crystalline quality and virtually stress-free.

Original languageEnglish
Title of host publicationPhysica Scripta T
Pages18-21
Number of pages4
VolumeT114
DOIs
Publication statusPublished - 2004
Event20th Nordic Semiconductor Meeting, NSM20 - Tampere, Finland
Duration: Aug 25 2003Aug 27 2003

Other

Other20th Nordic Semiconductor Meeting, NSM20
CountryFinland
CityTampere
Period8/25/038/27/03

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vapor phase epitaxy
hydrides
excitons
ellipsometry
sapphire
photoluminescence
transmission electron microscopy
curves
diffraction
lasers
x rays

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Gogova, D., Kasic, A., Larsson, H., Pécz, B., Yakimova, R., Ivanov, I. G., & Monemar, B. (2004). Characterization of high-quality free-standing GaN grown by HVPE. In Physica Scripta T (Vol. T114, pp. 18-21) https://doi.org/10.1088/0031-8949/2004/T114/004

Characterization of high-quality free-standing GaN grown by HVPE. / Gogova, D.; Kasic, A.; Larsson, H.; Pécz, B.; Yakimova, R.; Ivanov, I. G.; Monemar, B.

Physica Scripta T. Vol. T114 2004. p. 18-21.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gogova, D, Kasic, A, Larsson, H, Pécz, B, Yakimova, R, Ivanov, IG & Monemar, B 2004, Characterization of high-quality free-standing GaN grown by HVPE. in Physica Scripta T. vol. T114, pp. 18-21, 20th Nordic Semiconductor Meeting, NSM20, Tampere, Finland, 8/25/03. https://doi.org/10.1088/0031-8949/2004/T114/004
Gogova D, Kasic A, Larsson H, Pécz B, Yakimova R, Ivanov IG et al. Characterization of high-quality free-standing GaN grown by HVPE. In Physica Scripta T. Vol. T114. 2004. p. 18-21 https://doi.org/10.1088/0031-8949/2004/T114/004
Gogova, D. ; Kasic, A. ; Larsson, H. ; Pécz, B. ; Yakimova, R. ; Ivanov, I. G. ; Monemar, B. / Characterization of high-quality free-standing GaN grown by HVPE. Physica Scripta T. Vol. T114 2004. pp. 18-21
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