Characterization of GaAs/AlAs quantum well structures by HREM and LTSCL

D. B. Holt, C. E. Norman, G. Salviati, S. Franchi, A. Bosacchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

At 1 keV the CL emission from a nominally 3 nm type II single quantum well (SQW) is attributed to indirect transitions from states in the AlAs to the Γh states in the GaAs SQW. The width of this peak agrees well with HREM observations of the SQW heterointerface roughness, on the basis of a particle-in-a-box model. At 3 keV, the SQW CL peak broadens and shifts towards higher photon energies, attributed to additional higher energy, direct transitions arising due to saturation of the AlAs states. Growth interruption at the heterointerfaces broadens the SQW CL band. Photon excitation occurs unexpectedly deep in the specimens and the CL intensity increases with irradiation time.

Original languageEnglish
Title of host publicationInstitute of Physics Conference Series
PublisherPubl by IOP Publishing Ltd
Pages689-695
Number of pages7
Volume117
Publication statusPublished - 1991
EventMicroscopy of Semiconducting Materials, 1991 - Oxford, Engl
Duration: Mar 25 1991Mar 28 1991

Other

OtherMicroscopy of Semiconducting Materials, 1991
CityOxford, Engl
Period3/25/913/28/91

Fingerprint

High resolution electron microscopy
Semiconductor quantum wells
quantum wells
Photons
interruption
photons
boxes
roughness
Surface roughness
Irradiation
saturation
irradiation
energy
shift
excitation

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Engineering(all)

Cite this

Holt, D. B., Norman, C. E., Salviati, G., Franchi, S., & Bosacchi, A. (1991). Characterization of GaAs/AlAs quantum well structures by HREM and LTSCL. In Institute of Physics Conference Series (Vol. 117, pp. 689-695). Publ by IOP Publishing Ltd.

Characterization of GaAs/AlAs quantum well structures by HREM and LTSCL. / Holt, D. B.; Norman, C. E.; Salviati, G.; Franchi, S.; Bosacchi, A.

Institute of Physics Conference Series. Vol. 117 Publ by IOP Publishing Ltd, 1991. p. 689-695.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Holt, DB, Norman, CE, Salviati, G, Franchi, S & Bosacchi, A 1991, Characterization of GaAs/AlAs quantum well structures by HREM and LTSCL. in Institute of Physics Conference Series. vol. 117, Publ by IOP Publishing Ltd, pp. 689-695, Microscopy of Semiconducting Materials, 1991, Oxford, Engl, 3/25/91.
Holt DB, Norman CE, Salviati G, Franchi S, Bosacchi A. Characterization of GaAs/AlAs quantum well structures by HREM and LTSCL. In Institute of Physics Conference Series. Vol. 117. Publ by IOP Publishing Ltd. 1991. p. 689-695
Holt, D. B. ; Norman, C. E. ; Salviati, G. ; Franchi, S. ; Bosacchi, A. / Characterization of GaAs/AlAs quantum well structures by HREM and LTSCL. Institute of Physics Conference Series. Vol. 117 Publ by IOP Publishing Ltd, 1991. pp. 689-695
@inproceedings{eb3036d4c514477e9883a99c70e04b26,
title = "Characterization of GaAs/AlAs quantum well structures by HREM and LTSCL",
abstract = "At 1 keV the CL emission from a nominally 3 nm type II single quantum well (SQW) is attributed to indirect transitions from states in the AlAs to the Γh states in the GaAs SQW. The width of this peak agrees well with HREM observations of the SQW heterointerface roughness, on the basis of a particle-in-a-box model. At 3 keV, the SQW CL peak broadens and shifts towards higher photon energies, attributed to additional higher energy, direct transitions arising due to saturation of the AlAs states. Growth interruption at the heterointerfaces broadens the SQW CL band. Photon excitation occurs unexpectedly deep in the specimens and the CL intensity increases with irradiation time.",
author = "Holt, {D. B.} and Norman, {C. E.} and G. Salviati and S. Franchi and A. Bosacchi",
year = "1991",
language = "English",
volume = "117",
pages = "689--695",
booktitle = "Institute of Physics Conference Series",
publisher = "Publ by IOP Publishing Ltd",

}

TY - GEN

T1 - Characterization of GaAs/AlAs quantum well structures by HREM and LTSCL

AU - Holt, D. B.

AU - Norman, C. E.

AU - Salviati, G.

AU - Franchi, S.

AU - Bosacchi, A.

PY - 1991

Y1 - 1991

N2 - At 1 keV the CL emission from a nominally 3 nm type II single quantum well (SQW) is attributed to indirect transitions from states in the AlAs to the Γh states in the GaAs SQW. The width of this peak agrees well with HREM observations of the SQW heterointerface roughness, on the basis of a particle-in-a-box model. At 3 keV, the SQW CL peak broadens and shifts towards higher photon energies, attributed to additional higher energy, direct transitions arising due to saturation of the AlAs states. Growth interruption at the heterointerfaces broadens the SQW CL band. Photon excitation occurs unexpectedly deep in the specimens and the CL intensity increases with irradiation time.

AB - At 1 keV the CL emission from a nominally 3 nm type II single quantum well (SQW) is attributed to indirect transitions from states in the AlAs to the Γh states in the GaAs SQW. The width of this peak agrees well with HREM observations of the SQW heterointerface roughness, on the basis of a particle-in-a-box model. At 3 keV, the SQW CL peak broadens and shifts towards higher photon energies, attributed to additional higher energy, direct transitions arising due to saturation of the AlAs states. Growth interruption at the heterointerfaces broadens the SQW CL band. Photon excitation occurs unexpectedly deep in the specimens and the CL intensity increases with irradiation time.

UR - http://www.scopus.com/inward/record.url?scp=0026402263&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026402263&partnerID=8YFLogxK

M3 - Conference contribution

VL - 117

SP - 689

EP - 695

BT - Institute of Physics Conference Series

PB - Publ by IOP Publishing Ltd

ER -