Characterization of dopant profiles produced by ultra-shallow As implantation and spike annealing using medium energy ion scattering

S. Ichihara, T. Nakagawa, M. Nitta, S. Abo, T. Lohner, C. Angelov, K. Ohta, M. Takai

Research output: Contribution to journalConference article

9 Citations (Scopus)

Abstract

Medium energy ion scattering (MEIS) combining a toroidal electrostatic analyzer with an energy resolution (dE/E) of 4 × 10-3 has been used for ultra-shallow depth profiling of As implanted into Si at 1, 2 and 5 keV to a dose of 1.2 × 1015 ions/cm2 before and after spike annealing at 1075 °C. Depth profiling results extracted from MEIS spectra were compared with those of simulation and SIMS measurement. The arsenic re-distribution close to the surface after spike annealing was found by MEIS and SIMS measurements.

Original languageEnglish
Pages (from-to)584-588
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume219-220
Issue number1-4
DOIs
Publication statusPublished - Jun 1 2004
EventProceedings of the Sixteenth International Conference on Ion - Albuquerque, NM., United States
Duration: Jun 29 2003Jul 4 2003

Keywords

  • Depth resolution
  • MEIS
  • RBS
  • SIMS
  • Si
  • TEA

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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