Characterization of diffusion length of minority carriers in (CdZn)Te at temperatures 80-300K

J. Franc, E. Belas, P. Hlidek, A. L. Toth, H. Sitter, R. Grill, P. Hoschl, P. Moravec

Research output: Contribution to journalConference article

Abstract

Diffusion length (L) of minority carriers was determined in not intentionally doped Cd0.93Zn0.07Te single crystals by the EBIC method at temperatures 80-300K using an evaporated Au Schottky barrier for a separation of electron-hole pairs. The L values in P-(CdZn)Te were longer, than those of the binary CdTe and some showed a steep increase with decreasing temperature. The correlation of the diffusion length measurement with photoluminescence for the (CdZn)Te was observed. Temperature dependence of L for holes in N-(CdZn)Te fabricated by In diffusion were measured as well.

Original languageEnglish
Pages (from-to)163-169
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3890
Publication statusPublished - Dec 1 1999
EventProceedings of the 1998 4th International Conference on Material Sience and Material Properties for Infrared Optoelectronics - Kiev, Ukraine
Duration: Sep 29 1998Oct 2 1998

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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