Characterization of diffusion length of minority carriers in (CdZn)Te at temperatures 80-300K

J. Franc, E. Belas, P. Hlidek, A. Tóth, H. Sitter, R. Grill, P. Hoschl, P. Moravec

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Diffusion length (L) of minority carriers was determined in not intentionally doped Cd0.93Zn0.07Te single crystals by the EBIC method at temperatures 80-300K using an evaporated Au Schottky barrier for a separation of electron-hole pairs. The L values in P-(CdZn)Te were longer, than those of the binary CdTe and some showed a steep increase with decreasing temperature. The correlation of the diffusion length measurement with photoluminescence for the (CdZn)Te was observed. Temperature dependence of L for holes in N-(CdZn)Te fabricated by In diffusion were measured as well.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages163-169
Number of pages7
Volume3890
Publication statusPublished - 1999
EventProceedings of the 1998 4th International Conference on Material Sience and Material Properties for Infrared Optoelectronics - Kiev, Ukraine
Duration: Sep 29 1998Oct 2 1998

Other

OtherProceedings of the 1998 4th International Conference on Material Sience and Material Properties for Infrared Optoelectronics
CityKiev, Ukraine
Period9/29/9810/2/98

Fingerprint

diffusion length
minority carriers
doped crystals
photoluminescence
Temperature
temperature dependence
temperature
single crystals
Photoluminescence
Single crystals
Electrons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Franc, J., Belas, E., Hlidek, P., Tóth, A., Sitter, H., Grill, R., ... Moravec, P. (1999). Characterization of diffusion length of minority carriers in (CdZn)Te at temperatures 80-300K. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 3890, pp. 163-169). Society of Photo-Optical Instrumentation Engineers.

Characterization of diffusion length of minority carriers in (CdZn)Te at temperatures 80-300K. / Franc, J.; Belas, E.; Hlidek, P.; Tóth, A.; Sitter, H.; Grill, R.; Hoschl, P.; Moravec, P.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3890 Society of Photo-Optical Instrumentation Engineers, 1999. p. 163-169.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Franc, J, Belas, E, Hlidek, P, Tóth, A, Sitter, H, Grill, R, Hoschl, P & Moravec, P 1999, Characterization of diffusion length of minority carriers in (CdZn)Te at temperatures 80-300K. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 3890, Society of Photo-Optical Instrumentation Engineers, pp. 163-169, Proceedings of the 1998 4th International Conference on Material Sience and Material Properties for Infrared Optoelectronics, Kiev, Ukraine, 9/29/98.
Franc J, Belas E, Hlidek P, Tóth A, Sitter H, Grill R et al. Characterization of diffusion length of minority carriers in (CdZn)Te at temperatures 80-300K. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3890. Society of Photo-Optical Instrumentation Engineers. 1999. p. 163-169
Franc, J. ; Belas, E. ; Hlidek, P. ; Tóth, A. ; Sitter, H. ; Grill, R. ; Hoschl, P. ; Moravec, P. / Characterization of diffusion length of minority carriers in (CdZn)Te at temperatures 80-300K. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3890 Society of Photo-Optical Instrumentation Engineers, 1999. pp. 163-169
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