Characterization of cobalt films grown on MgO(001) by dc-biased-sputter deposition

Mituru Hashimoto, Hong Qiu, Tatsuya Ohbuchi, Miklos Adamik, Hisashi Nakai, Arpad Barna, Peter B. Barna

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Cobalt films (90 nm thick) were deposited on MgO(001) substrates at 250°C by de-sputtering at 2.5 kV in pure argon gas. A bias voltage Vs between O and -180 V was applied to the substrate during the deposition. Reflection high-energy electron diffraction, cross-sectional transmission electron microscopy (XTEM) and X-ray photo electron spectroscopy, as well as measurements of the temperature coefficient of resistivity and saturation magnetization (4πMs), all as a function of Vs, confirmed that the structural and physical properties of cobalt films are most improved at -Vs= 140 V with a Co(001)\\MgO(001) and Co[010]\\MgO[010] relationship. A structural study of cobalt films prepared at -Vs= 140 V by high-resolution XTEM revealed that the stress induced in cobalt films is relaxed by the generation of defects such as misfit dislocations, lattice expansion and partial lattice distortions.

Original languageEnglish
Pages (from-to)792-797
Number of pages6
JournalJournal of Crystal Growth
Issue number1-4
Publication statusPublished - Sep 1996


ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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