Characterization of amorphous vanadium pentoxide thin films prepared by chemical vapour deposition (CVD) and vacuum deposition

L. Michailovits, K. Bali, T. Szörényi, I. Hevesi

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Abstract

Amorphous vanadium pentoxide thin films were prepared by CVD of VOCl3 with H2O at room temperature and by vacuum deposition. The stoichiometry was estimated from quantitative EPR measurements. The amorphous to crystalline transition temperatures, 453-463 K for vacuum deposited films and 523±10 K for films prepared by CVD, were determined by DTA, polarization microscopy and electrical conductivity measurements. The structural changes were monitored by electron microscopy and EPR.

Original languageEnglish
Pages (from-to)217-221
Number of pages5
JournalActa Physica Academiae Scientiarum Hungaricae
Volume49
Issue number1-3
DOIs
Publication statusPublished - Aug 1 1980

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ASJC Scopus subject areas

  • Nuclear and High Energy Physics

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