Characterization of a two-layer resist

Research output: Contribution to journalArticle

Abstract

The performance of a novel two-layer-technique, consisting of two positive photoresist layers, is discussed. High energy flood exposure with near UV radiation, followed by a high temperature bake of the bottom AZ1450J resist layer protects the surface of this layer against erosion when the top layer AZ1450B or AZ1470 resist is spun on it. The one-step-development of both layers has become also possible. The phenomenon of the increased thermal stability (120-165°) of the photoactive compound of this bottom resist layer has been detected by means of infrared spectroscopy and has been proven by development rate measurements under the same conditions.

Original languageEnglish
Pages (from-to)525-532
Number of pages8
JournalMicroelectronic Engineering
Volume3
Issue number1-4
DOIs
Publication statusPublished - 1985

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Photoresists
Ultraviolet radiation
Erosion
Infrared spectroscopy
Thermodynamic stability
Temperature
photoresists
erosion
thermal stability
infrared spectroscopy
radiation

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

Cite this

Characterization of a two-layer resist. / Vázsonyi, E.; Vértesy, Z.; Holly, S.

In: Microelectronic Engineering, Vol. 3, No. 1-4, 1985, p. 525-532.

Research output: Contribution to journalArticle

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