Characterization and technology of contacts to GaAs

I. Mojzes, B. Kovacs, R. Veresegyhazy, B. Pecz, Zs J. Horvath

Research output: Contribution to journalConference article

Abstract

Gold-based thin solid films are the most commonly used materials for contacts on GaAs and other III-V compounds. The electrical parameters to be achieved are the results of both the metallization used and the technological steps used in the device technology. One of the most important steps in the formation of contacts is the heat treatment leading to the interaction of the metallization in solid or liquid phases during a reaction duration far from the equilibrium. Their processes were investigated during in situ (such as evolved gas analysis) and ex situ (such as RBS, TEM and electrical measurement) techniques. A wide range of technological parameters, such as heat treatment time and duration, thickness variation, a new method for the decrease in the volatile component losses during the heat treatment using capping, insulator layers on the top of the metallization and ion mixing were investigated. The investigations were carried out to understand the processes taking place in thin solid films during the technological steps.

Original languageEnglish
Number of pages1
JournalVacuum
Volume40
Issue number1-2
DOIs
Publication statusPublished - 1990
EventSelected Proceedings of the Yugoslav-Austrian-Hungarian Fourth Joint Vacuum Conference - Portoroz, Yugosl
Duration: Sep 20 1988Sep 23 1988

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

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