Gold-based thin solid films are the most commonly used materials for contacts on GaAs and other III-V compounds. The electrical parameters to be achieved are the results of both the metallization used and the technological steps used in the device technology. One of the most important steps in the formation of contacts is the heat treatment leading to the interaction of the metallization in solid or liquid phases during a reaction duration far from the equilibrium. Their processes were investigated during in situ (such as evolved gas analysis) and ex situ (such as RBS, TEM and electrical measurement) techniques. A wide range of technological parameters, such as heat treatment time and duration, thickness variation, a new method for the decrease in the volatile component losses during the heat treatment using capping, insulator layers on the top of the metallization and ion mixing were investigated. The investigations were carried out to understand the processes taking place in thin solid films during the technological steps.
|Number of pages||1|
|Publication status||Published - 1990|
|Event||Selected Proceedings of the Yugoslav-Austrian-Hungarian Fourth Joint Vacuum Conference - Portoroz, Yugosl|
Duration: Sep 20 1988 → Sep 23 1988
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces, Coatings and Films