Challenges in thermal interface material testing

Clemens J M Lasance, Cameron T. Murray, David L. Saums, M. Rencz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

43 Citations (Scopus)

Abstract

Characterization of thermal properties of Thermal Interface Materials (TIMs) has gained increasing importance as the relative percentage of overall semiconductor package material thermal resistance attributable to the TIMs has increased. The development of new TIM materials has increasingly focused on materials with very high performance and, in certain instances, with very thin in-situ application thickness. These trends have placed increasing focus on the characterization methods, characterization equipment, and accuracy and repeatability of results. This discussion focuses mainly on standardization aspects, standardized laboratory measurement methodology, and application-specific measurements.

Original languageEnglish
Title of host publicationAnnual IEEE Semiconductor Thermal Measurement and Management Symposium
Pages42-49
Number of pages8
Volume2006
Publication statusPublished - 2006
Event22nd Annual IEEE Semiconductor Thermal Measurement and Management, SEMI-THERM 2006 - Dallas, TX, United States
Duration: Mar 14 2006Mar 16 2006

Other

Other22nd Annual IEEE Semiconductor Thermal Measurement and Management, SEMI-THERM 2006
CountryUnited States
CityDallas, TX
Period3/14/063/16/06

Fingerprint

Materials testing
standardization
thermal resistance
thermodynamic properties
methodology
trends
Heat resistance
Standardization
Hot Temperature
Thermodynamic properties
Semiconductor materials

Keywords

  • Steady-state Thermal Testing
  • Thermal Interface Materials
  • Thermal Resistance
  • Transient Method Thermal Testing

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Instrumentation

Cite this

Lasance, C. J. M., Murray, C. T., Saums, D. L., & Rencz, M. (2006). Challenges in thermal interface material testing. In Annual IEEE Semiconductor Thermal Measurement and Management Symposium (Vol. 2006, pp. 42-49). [1625204]

Challenges in thermal interface material testing. / Lasance, Clemens J M; Murray, Cameron T.; Saums, David L.; Rencz, M.

Annual IEEE Semiconductor Thermal Measurement and Management Symposium. Vol. 2006 2006. p. 42-49 1625204.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lasance, CJM, Murray, CT, Saums, DL & Rencz, M 2006, Challenges in thermal interface material testing. in Annual IEEE Semiconductor Thermal Measurement and Management Symposium. vol. 2006, 1625204, pp. 42-49, 22nd Annual IEEE Semiconductor Thermal Measurement and Management, SEMI-THERM 2006, Dallas, TX, United States, 3/14/06.
Lasance CJM, Murray CT, Saums DL, Rencz M. Challenges in thermal interface material testing. In Annual IEEE Semiconductor Thermal Measurement and Management Symposium. Vol. 2006. 2006. p. 42-49. 1625204
Lasance, Clemens J M ; Murray, Cameron T. ; Saums, David L. ; Rencz, M. / Challenges in thermal interface material testing. Annual IEEE Semiconductor Thermal Measurement and Management Symposium. Vol. 2006 2006. pp. 42-49
@inproceedings{5a75d8f6ccdb45e087b00f475a435395,
title = "Challenges in thermal interface material testing",
abstract = "Characterization of thermal properties of Thermal Interface Materials (TIMs) has gained increasing importance as the relative percentage of overall semiconductor package material thermal resistance attributable to the TIMs has increased. The development of new TIM materials has increasingly focused on materials with very high performance and, in certain instances, with very thin in-situ application thickness. These trends have placed increasing focus on the characterization methods, characterization equipment, and accuracy and repeatability of results. This discussion focuses mainly on standardization aspects, standardized laboratory measurement methodology, and application-specific measurements.",
keywords = "Steady-state Thermal Testing, Thermal Interface Materials, Thermal Resistance, Transient Method Thermal Testing",
author = "Lasance, {Clemens J M} and Murray, {Cameron T.} and Saums, {David L.} and M. Rencz",
year = "2006",
language = "English",
isbn = "1424401534",
volume = "2006",
pages = "42--49",
booktitle = "Annual IEEE Semiconductor Thermal Measurement and Management Symposium",

}

TY - GEN

T1 - Challenges in thermal interface material testing

AU - Lasance, Clemens J M

AU - Murray, Cameron T.

AU - Saums, David L.

AU - Rencz, M.

PY - 2006

Y1 - 2006

N2 - Characterization of thermal properties of Thermal Interface Materials (TIMs) has gained increasing importance as the relative percentage of overall semiconductor package material thermal resistance attributable to the TIMs has increased. The development of new TIM materials has increasingly focused on materials with very high performance and, in certain instances, with very thin in-situ application thickness. These trends have placed increasing focus on the characterization methods, characterization equipment, and accuracy and repeatability of results. This discussion focuses mainly on standardization aspects, standardized laboratory measurement methodology, and application-specific measurements.

AB - Characterization of thermal properties of Thermal Interface Materials (TIMs) has gained increasing importance as the relative percentage of overall semiconductor package material thermal resistance attributable to the TIMs has increased. The development of new TIM materials has increasingly focused on materials with very high performance and, in certain instances, with very thin in-situ application thickness. These trends have placed increasing focus on the characterization methods, characterization equipment, and accuracy and repeatability of results. This discussion focuses mainly on standardization aspects, standardized laboratory measurement methodology, and application-specific measurements.

KW - Steady-state Thermal Testing

KW - Thermal Interface Materials

KW - Thermal Resistance

KW - Transient Method Thermal Testing

UR - http://www.scopus.com/inward/record.url?scp=33750143844&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33750143844&partnerID=8YFLogxK

M3 - Conference contribution

SN - 1424401534

SN - 9781424401536

VL - 2006

SP - 42

EP - 49

BT - Annual IEEE Semiconductor Thermal Measurement and Management Symposium

ER -