CBr4 as precursor for VPE growth of cubic silicon carbide

B. E. Watts, M. Bosi, G. Attolini, G. Battistig, L. Dobos, B. Pécz

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

This work presents a study of carbon tetrabromide (CBr4) as precursor to deposit 3C-SiC on (001) and (111) Si by VPE technique at temperatures ranging between 1000 °C and 1250 °C. TEM, AFM and SEM results indicate that the epitaxy proceeds as a 3D growth of uncoalesced islands at low temperature, whereas a continuous crystalline layer with hillocks on top is obtained above 1200 °C. The hillocks observed at high temperature appear well faceted and their shape and orientation are analyzed in detail by AFM, showing a {311} preferred orientation. 3D island growth was suppressed by adding C3H8 to the precursor gases.

Original languageEnglish
Pages (from-to)583-588
Number of pages6
JournalCrystal Research and Technology
Volume45
Issue number6
DOIs
Publication statusPublished - Jun 2010

Fingerprint

Vapor phase epitaxy
Silicon carbide
silicon carbides
atomic force microscopy
epitaxy
deposits
Epitaxial growth
Temperature
transmission electron microscopy
scanning electron microscopy
carbon
Deposits
Gases
gases
Crystalline materials
Transmission electron microscopy
Scanning electron microscopy
Carbon
temperature
silicon carbide

Keywords

  • AFM
  • CBr
  • Faceting
  • SiC
  • VPE

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

CBr4 as precursor for VPE growth of cubic silicon carbide. / Watts, B. E.; Bosi, M.; Attolini, G.; Battistig, G.; Dobos, L.; Pécz, B.

In: Crystal Research and Technology, Vol. 45, No. 6, 06.2010, p. 583-588.

Research output: Contribution to journalArticle

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