CBr4 as precursor for VPE growth of cubic silicon carbide

B. E. Watts, M. Bosi, G. Attolini, G. Battistig, L. Dobos, B. Pécz

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This work presents a study of carbon tetrabromide (CBr4) as precursor to deposit 3C-SiC on (001) and (111) Si by VPE technique at temperatures ranging between 1000 °C and 1250 °C. TEM, AFM and SEM results indicate that the epitaxy proceeds as a 3D growth of uncoalesced islands at low temperature, whereas a continuous crystalline layer with hillocks on top is obtained above 1200 °C. The hillocks observed at high temperature appear well faceted and their shape and orientation are analyzed in detail by AFM, showing a {311} preferred orientation. 3D island growth was suppressed by adding C3H8 to the precursor gases.

Original languageEnglish
Pages (from-to)583-588
Number of pages6
JournalCrystal Research and Technology
Issue number6
Publication statusPublished - Jun 1 2010



  • AFM
  • CBr
  • Faceting
  • SiC
  • VPE

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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