Carrier recombination dynamics in self-ordered InAs quantum dots

F. Bogani, L. Carraresi, R. Mattolini, M. Colocci, A. Bosacchi, S. Franchi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A photoluminescence study of self-ordered InAs quantum dots grown by molecular beam epitaxy on a GaAs substrate is reported. Short pulses and high excitations have been used in order to observe emission from higher states of the quantum dots. The energy spacing between adjacent transitions seems to be of the order of 40-50 meV for dot diameters around 20 nm. The photoluminescence decay time from the ground state is of the order of 650-700 ps and decreases down to roughly 100 ps for the highest confined states. A cascade-like mechanism for the carrier relaxation in these structures is strongly suggested by the time-resolved data.

Original languageEnglish
Pages (from-to)1371-1375
Number of pages5
JournalIl Nuovo Cimento D
Volume17
Issue number11-12
DOIs
Publication statusPublished - Nov 1995

Fingerprint

Semiconductor quantum dots
Photoluminescence
quantum dots
photoluminescence
Molecular beam epitaxy
Ground state
cascades
molecular beam epitaxy
spacing
ground state
decay
Substrates
pulses
excitation
indium arsenide
energy
gallium arsenide

Keywords

  • Conference proceedings
  • Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds)
  • III-V compounds and systems
  • III-V semiconductors

ASJC Scopus subject areas

  • Ocean Engineering
  • Mechanical Engineering
  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Engineering (miscellaneous)
  • Nuclear Energy and Engineering
  • Computer Science Applications
  • Chemical Engineering(all)

Cite this

Bogani, F., Carraresi, L., Mattolini, R., Colocci, M., Bosacchi, A., & Franchi, S. (1995). Carrier recombination dynamics in self-ordered InAs quantum dots. Il Nuovo Cimento D, 17(11-12), 1371-1375. https://doi.org/10.1007/BF02457212

Carrier recombination dynamics in self-ordered InAs quantum dots. / Bogani, F.; Carraresi, L.; Mattolini, R.; Colocci, M.; Bosacchi, A.; Franchi, S.

In: Il Nuovo Cimento D, Vol. 17, No. 11-12, 11.1995, p. 1371-1375.

Research output: Contribution to journalArticle

Bogani, F, Carraresi, L, Mattolini, R, Colocci, M, Bosacchi, A & Franchi, S 1995, 'Carrier recombination dynamics in self-ordered InAs quantum dots', Il Nuovo Cimento D, vol. 17, no. 11-12, pp. 1371-1375. https://doi.org/10.1007/BF02457212
Bogani F, Carraresi L, Mattolini R, Colocci M, Bosacchi A, Franchi S. Carrier recombination dynamics in self-ordered InAs quantum dots. Il Nuovo Cimento D. 1995 Nov;17(11-12):1371-1375. https://doi.org/10.1007/BF02457212
Bogani, F. ; Carraresi, L. ; Mattolini, R. ; Colocci, M. ; Bosacchi, A. ; Franchi, S. / Carrier recombination dynamics in self-ordered InAs quantum dots. In: Il Nuovo Cimento D. 1995 ; Vol. 17, No. 11-12. pp. 1371-1375.
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