Carrier profiling of GaAs/GaAlAs multilayer structures (heterojunction bipolar transistor and heterojunction p-i-n photodiode) by electrochemical capacitance-voltage technique is described. Optimum measurement parameters (electrolyte type, etching and measurement voltages, etc.) are established. The results are compared with those of spreading resistance profiling and transmission electron microscopy. Some specific problems are discussed.
|Number of pages||6|
|Journal||Physica Status Solidi (A) Applied Research|
|Publication status||Published - Oct 1 1999|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics