Carrier profiling of a heterojunction bipolar transistor and p-i-n photodiode structures by electrochemical C-V technique

R. Kinder, Á Nemcsics, R. Harman, F. Riesz, B. Pécz

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Carrier profiling of GaAs/GaAlAs multilayer structures (heterojunction bipolar transistor and heterojunction p-i-n photodiode) by electrochemical capacitance-voltage technique is described. Optimum measurement parameters (electrolyte type, etching and measurement voltages, etc.) are established. The results are compared with those of spreading resistance profiling and transmission electron microscopy. Some specific problems are discussed.

Original languageEnglish
Pages (from-to)631-636
Number of pages6
JournalPhysica Status Solidi (A) Applied Research
Volume175
Issue number2
DOIs
Publication statusPublished - Oct 1 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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