Carrier-envelop phase noise of ultrashort pulses in a ti: Sapphire amplifier

A. Börzsönyi, R. S. Nagymihály, P. Jójárt, K. Osvay

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The relative carrier-envelop phase (CEP) of pulses are measured at different repetition rates, gain, and saturation levels of a three-pass amplifier, resulting in an increase of 100mrad CEP noise depending on the amplification conditions.

Original languageEnglish
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO_SI 2013
PagesJTh2A.15
Publication statusPublished - Nov 18 2013
EventCLEO: Science and Innovations, CLEO_SI 2013 - San Jose, CA, United States
Duration: Jun 9 2013Jun 14 2013

Publication series

NameCLEO: Science and Innovations, CLEO_SI 2013

Other

OtherCLEO: Science and Innovations, CLEO_SI 2013
CountryUnited States
CitySan Jose, CA
Period6/9/136/14/13

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Börzsönyi, A., Nagymihály, R. S., Jójárt, P., & Osvay, K. (2013). Carrier-envelop phase noise of ultrashort pulses in a ti: Sapphire amplifier. In CLEO: Science and Innovations, CLEO_SI 2013 (pp. JTh2A.15). (CLEO: Science and Innovations, CLEO_SI 2013).