Capture kinetics at deep-level defects in lattice-mismatched GaAs-based heterostructures

O. Yastrubchak, T. Wosiński, A. Ma̧kosa, T. Figielski, A. Tóth

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Two deep-level traps associated with lattice-mismatch induced defects in GaAs/InGaAs heterostructures have been revealed by means of deep-level transient spectroscopy (DLTS). An electron trap, at Ec - 0.64 eV, has been attributed to electron states associated with threading dislocations in the ternary compound while a hole trap, at Ev + 0.67 eV, has been ascribed to misfit dislocations at the heterostructure interface. Detailed investigation of the dependence of DLTS-line amplitude and its shape on the filling time of the traps with charge carriers allowed us to specify the type of electronic states related to both traps. In terms of the model of electronic states associated with extended defects, which takes into account the rate at which the states reach their internal electron equilibrium, we relate the electron trap to "localized" states and the hole trap to "bandlike" ones.

Original languageEnglish
Pages (from-to)757-760
Number of pages4
JournalPhysica B: Condensed Matter
Volume308-310
DOIs
Publication statusPublished - Dec 2001

Fingerprint

Hole traps
Electron traps
Deep level transient spectroscopy
Electronic states
Dislocations (crystals)
Heterojunctions
traps
Defects
Lattice mismatch
Kinetics
defects
kinetics
Charge carriers
Electron energy levels
Electrons
electrons
electron states
gallium arsenide
electronics
spectroscopy

Keywords

  • Capture kinetics
  • Deep levels
  • Dislocations
  • Semiconductor heterostructures

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Capture kinetics at deep-level defects in lattice-mismatched GaAs-based heterostructures. / Yastrubchak, O.; Wosiński, T.; Ma̧kosa, A.; Figielski, T.; Tóth, A.

In: Physica B: Condensed Matter, Vol. 308-310, 12.2001, p. 757-760.

Research output: Contribution to journalArticle

Yastrubchak, O. ; Wosiński, T. ; Ma̧kosa, A. ; Figielski, T. ; Tóth, A. / Capture kinetics at deep-level defects in lattice-mismatched GaAs-based heterostructures. In: Physica B: Condensed Matter. 2001 ; Vol. 308-310. pp. 757-760.
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