Calculation of the surface excitation parameter for Si and Ge from measured electron backscattered spectra by means of a Monte-Carlo simulation

Gábor Tamás Orosz, A. Sulyok, G. Gergely, Sándor Gurbán, M. Menyhárd

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A new Monte Carlo method has been developed for simulating backscattered electron spectra, and this was applied for determining the surface excitation parameter (SEP). The simulation is based on direct tracking of electron trajectories in the solid, taking into account elastic and inelastic events. The elastic scattering cross sections are taken from literature, while inelastic cross section data are obtained by a fitting procedure. After some iterations, the program produces electron spectra fitting well to the experimental ones. Si and Ge electron spectra were simulated and SEP values were calculated. The SEP values are compared to other ones from literature.

Original languageEnglish
Pages (from-to)343-348
Number of pages6
JournalMicroscopy and Microanalysis
Volume9
Issue number4
DOIs
Publication statusPublished - Aug 2003

Fingerprint

Electrons
excitation
electron trajectories
electrons
simulation
scattering cross sections
iteration
Elastic scattering
Monte Carlo method
elastic scattering
Monte Carlo methods
cross sections
Trajectories
Monte Carlo simulation

Keywords

  • Electron spectroscopy
  • Monte Carlo method
  • Surface excitation parameter

ASJC Scopus subject areas

  • Instrumentation

Cite this

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abstract = "A new Monte Carlo method has been developed for simulating backscattered electron spectra, and this was applied for determining the surface excitation parameter (SEP). The simulation is based on direct tracking of electron trajectories in the solid, taking into account elastic and inelastic events. The elastic scattering cross sections are taken from literature, while inelastic cross section data are obtained by a fitting procedure. After some iterations, the program produces electron spectra fitting well to the experimental ones. Si and Ge electron spectra were simulated and SEP values were calculated. The SEP values are compared to other ones from literature.",
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T1 - Calculation of the surface excitation parameter for Si and Ge from measured electron backscattered spectra by means of a Monte-Carlo simulation

AU - Orosz, Gábor Tamás

AU - Sulyok, A.

AU - Gergely, G.

AU - Gurbán, Sándor

AU - Menyhárd, M.

PY - 2003/8

Y1 - 2003/8

N2 - A new Monte Carlo method has been developed for simulating backscattered electron spectra, and this was applied for determining the surface excitation parameter (SEP). The simulation is based on direct tracking of electron trajectories in the solid, taking into account elastic and inelastic events. The elastic scattering cross sections are taken from literature, while inelastic cross section data are obtained by a fitting procedure. After some iterations, the program produces electron spectra fitting well to the experimental ones. Si and Ge electron spectra were simulated and SEP values were calculated. The SEP values are compared to other ones from literature.

AB - A new Monte Carlo method has been developed for simulating backscattered electron spectra, and this was applied for determining the surface excitation parameter (SEP). The simulation is based on direct tracking of electron trajectories in the solid, taking into account elastic and inelastic events. The elastic scattering cross sections are taken from literature, while inelastic cross section data are obtained by a fitting procedure. After some iterations, the program produces electron spectra fitting well to the experimental ones. Si and Ge electron spectra were simulated and SEP values were calculated. The SEP values are compared to other ones from literature.

KW - Electron spectroscopy

KW - Monte Carlo method

KW - Surface excitation parameter

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