Calculation of IR reflection spectra of inhomogeneously doped semiconductors

E. Hild, A. Grofcsik

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Abstract

A computer program based on numerical solutions of the differential equation for the optical admittance has been developed for the calculation of i.r. reflection spectra of inhomogeneously doped semiconductor layers. Computed spectra are reported for different impurity profiles. A graphical method is suggested for two-parameter profiles to determine these parameters.

Original languageEnglish
Pages (from-to)23-33
Number of pages11
JournalInfrared Physics
Volume18
Issue number1
DOIs
Publication statusPublished - Jan 1978

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ASJC Scopus subject areas

  • Engineering(all)

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