BERECHNUNG DER INFRAROT-REFLEXIONSSPEKTREN VON DOTIERTEN SILIZIUMSCHEIBEN UND ANWENDUNG DER THEORETISCHEN SPEKTREN FUER DIE BESTIMMUNG DER OBERFLAECHENKONZENTRATION UND DES PROFILPARAMETERS BZW. DER RELAXATIONSZEIT.

Translated title of the contribution: Calculation of Infrared Reflection Spectra of Doped Silicon Wafers and Application of Theoretical Spectra for Determination of Surface Concentration and Profile Parameter or of Relaxation Time.

E. Hild, A. Grofcsik, J. Rac

Research output: Chapter in Book/Report/Conference proceedingChapter

2 Citations (Scopus)

Abstract

For determining the electron-physical characteristics of semiconductors with homogeneous distribution of dopants, IR-spectra are well usable in addition to electrical measurements and to those based on Hall-effect. A method is presented for calculating the transmittance and reflectance of inhomogeneous layers. This method is based on the numerical solution of the simple differential equation holding for the optical admittance.

Original languageGerman
Title of host publicationTungsram Tech Mitt
Pages1561-1572
Number of pages12
Edition37
Publication statusPublished - 1978

Fingerprint

Hall effect
Silicon wafers
Relaxation time
Differential equations
Doping (additives)
Semiconductor materials
Infrared radiation
Electrons

ASJC Scopus subject areas

  • Engineering(all)

Cite this

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abstract = "For determining the electron-physical characteristics of semiconductors with homogeneous distribution of dopants, IR-spectra are well usable in addition to electrical measurements and to those based on Hall-effect. A method is presented for calculating the transmittance and reflectance of inhomogeneous layers. This method is based on the numerical solution of the simple differential equation holding for the optical admittance.",
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