Calculation of Hyperfine Constants of Defects in 4H-SiC

A. Gali, P. Deák, N. T. Son, E. Janzén, H. J. Von Bardeleben, Jean Louis Monge

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Knowledge about the creation and diffusion of intrinsic point defects is crucial for devising annealing strategies after irradiation steps as, e.g., implantation. Experimental information can be obtained by observing the appearance and/or disappearance of characteristic electrical, optical or magnetic spectra, however, these have to be first assigned to a given defect. In case of silicon carbide even this very first task has not been accomplished yet in case of the carbon vacancy, with which two different electron spin resonance (ESR) centers (anneling out at very different temperatures) have been identified. Ab initio all-electron supercell calculations have been carried out to determine the hyperfine constants of several defects in 4H-SiC in order to justify the models of the measured ESR signals. The quality of the results were tested on the well-documented case of interstitial hydrogen in silicon.

Original languageEnglish
Pages (from-to)511-514
Number of pages4
JournalMaterials Science Forum
Volume433-436
Publication statusPublished - 2003

Fingerprint

Paramagnetic resonance
electron paramagnetic resonance
Defects
defects
Silicon
Point defects
Silicon carbide
silicon carbides
point defects
Vacancies
optical spectrum
Hydrogen
implantation
interstitials
Carbon
Irradiation
Annealing
irradiation
annealing
Electrons

Keywords

  • Defects
  • Hyperfine Constants
  • Theory

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Gali, A., Deák, P., Son, N. T., Janzén, E., Von Bardeleben, H. J., & Monge, J. L. (2003). Calculation of Hyperfine Constants of Defects in 4H-SiC. Materials Science Forum, 433-436, 511-514.

Calculation of Hyperfine Constants of Defects in 4H-SiC. / Gali, A.; Deák, P.; Son, N. T.; Janzén, E.; Von Bardeleben, H. J.; Monge, Jean Louis.

In: Materials Science Forum, Vol. 433-436, 2003, p. 511-514.

Research output: Contribution to journalArticle

Gali, A, Deák, P, Son, NT, Janzén, E, Von Bardeleben, HJ & Monge, JL 2003, 'Calculation of Hyperfine Constants of Defects in 4H-SiC', Materials Science Forum, vol. 433-436, pp. 511-514.
Gali A, Deák P, Son NT, Janzén E, Von Bardeleben HJ, Monge JL. Calculation of Hyperfine Constants of Defects in 4H-SiC. Materials Science Forum. 2003;433-436:511-514.
Gali, A. ; Deák, P. ; Son, N. T. ; Janzén, E. ; Von Bardeleben, H. J. ; Monge, Jean Louis. / Calculation of Hyperfine Constants of Defects in 4H-SiC. In: Materials Science Forum. 2003 ; Vol. 433-436. pp. 511-514.
@article{9df6385b5bef40009624afb1d65ea7e7,
title = "Calculation of Hyperfine Constants of Defects in 4H-SiC",
abstract = "Knowledge about the creation and diffusion of intrinsic point defects is crucial for devising annealing strategies after irradiation steps as, e.g., implantation. Experimental information can be obtained by observing the appearance and/or disappearance of characteristic electrical, optical or magnetic spectra, however, these have to be first assigned to a given defect. In case of silicon carbide even this very first task has not been accomplished yet in case of the carbon vacancy, with which two different electron spin resonance (ESR) centers (anneling out at very different temperatures) have been identified. Ab initio all-electron supercell calculations have been carried out to determine the hyperfine constants of several defects in 4H-SiC in order to justify the models of the measured ESR signals. The quality of the results were tested on the well-documented case of interstitial hydrogen in silicon.",
keywords = "Defects, Hyperfine Constants, Theory",
author = "A. Gali and P. De{\'a}k and Son, {N. T.} and E. Janz{\'e}n and {Von Bardeleben}, {H. J.} and Monge, {Jean Louis}",
year = "2003",
language = "English",
volume = "433-436",
pages = "511--514",
journal = "Materials Science Forum",
issn = "0255-5476",
publisher = "Trans Tech Publications",

}

TY - JOUR

T1 - Calculation of Hyperfine Constants of Defects in 4H-SiC

AU - Gali, A.

AU - Deák, P.

AU - Son, N. T.

AU - Janzén, E.

AU - Von Bardeleben, H. J.

AU - Monge, Jean Louis

PY - 2003

Y1 - 2003

N2 - Knowledge about the creation and diffusion of intrinsic point defects is crucial for devising annealing strategies after irradiation steps as, e.g., implantation. Experimental information can be obtained by observing the appearance and/or disappearance of characteristic electrical, optical or magnetic spectra, however, these have to be first assigned to a given defect. In case of silicon carbide even this very first task has not been accomplished yet in case of the carbon vacancy, with which two different electron spin resonance (ESR) centers (anneling out at very different temperatures) have been identified. Ab initio all-electron supercell calculations have been carried out to determine the hyperfine constants of several defects in 4H-SiC in order to justify the models of the measured ESR signals. The quality of the results were tested on the well-documented case of interstitial hydrogen in silicon.

AB - Knowledge about the creation and diffusion of intrinsic point defects is crucial for devising annealing strategies after irradiation steps as, e.g., implantation. Experimental information can be obtained by observing the appearance and/or disappearance of characteristic electrical, optical or magnetic spectra, however, these have to be first assigned to a given defect. In case of silicon carbide even this very first task has not been accomplished yet in case of the carbon vacancy, with which two different electron spin resonance (ESR) centers (anneling out at very different temperatures) have been identified. Ab initio all-electron supercell calculations have been carried out to determine the hyperfine constants of several defects in 4H-SiC in order to justify the models of the measured ESR signals. The quality of the results were tested on the well-documented case of interstitial hydrogen in silicon.

KW - Defects

KW - Hyperfine Constants

KW - Theory

UR - http://www.scopus.com/inward/record.url?scp=0242496546&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0242496546&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0242496546

VL - 433-436

SP - 511

EP - 514

JO - Materials Science Forum

JF - Materials Science Forum

SN - 0255-5476

ER -