Buffer layer/film interactions in the growth of Tl2Ba2Ca1Cu2Ox films on CeO2 buffered sapphire

A. P. Bramley, S. M. Morley, C. R.M. Grovenor, B. Pecz

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Abstract

Tl2Ba2Ca1Cu2Ox thin films have been grown on highly textured CeO2 layers deposited onto R-plane sapphire substrates. The Tl2Ba2Ca1Cu2Ox films have critical temperature (Tc) values around 95 K and current density (Jc) values up to 8×104 A/cm2. The films are c-axis oriented even though we have identified the formation of a polycrystalline BaCe(Tl)O3 layer by reaction between the buffer layer and the superconducting precursor during the thalliation process.

Original languageEnglish
Number of pages1
JournalApplied Physics Letters
DOIs
Publication statusPublished - Dec 1 1995

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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